Inventor · disambiguated record
Poren Tang
Also filed as: TANG POREN
17 granted patents·5 pending applications·20 citations·filing 2011–2023
88Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP7CAI YIMAO5SEMICONDUCTOR MFG INT BEIJING CORP4SAMSUNG ELECTRONICS CO LTD3HUANG RU2
Top patents by PatentIndex Score
22 records- 0194US10008575B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·13 cites·20 claims
- 0291US11728378B2Semiconductor device and method for manufacturing sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2021·Granted Aug 15, 2023·2 cites·6 claims
- 0384US11127638B2Semiconductor device and fabrication method including air gap spacersSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Sep 21, 2021·3 cites·11 claims
- 0473US10978349B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Apr 13, 2021·1 cites·18 claims
- 0569US10991794B2Semiconductor device and method for manufacturing sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2018·Granted Apr 27, 2021·1 cites·11 claims
- 0664US11742245B2Semiconductor fabrication method and structure using multiple sacrificial layers to form sidewall spacersSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Aug 29, 2023·0 cites·9 claims
- 0761US11637193B2Gate-all-around field effect transistor and method for manufacturing sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2020·Granted Apr 25, 2023·0 cites·8 claims
- 0861US11545398B2Semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jan 3, 2023·0 cites·8 claims
- 0960US10748997B2Tunnel field-effect transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2019·Granted Aug 18, 2020·0 cites·8 claims
- 1056US10475884B2Tunnel field-effect transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Nov 12, 2019·0 cites·15 claims
- 1155US2023299189A1Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Application pending·0 cites
- 1254US10804372B2Gate-all-around field effect transistor and method for manufacturing sameSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2018·Granted Oct 13, 2020·0 cites·10 claims
- 1343US10453921B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Oct 22, 2019·0 cites·18 claims
- 1441US9899272B2Methods of fabricating semiconductor devices including complementary metal oxide semiconductor transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·0 cites·20 claims
- 1541US2014145139A1Transparent flexible resistive memory and fabrication method thereofHUANG RU·Filed 2012·Application pending·0 cites
- 1638US9508832B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 29, 2016·0 cites·17 claims
- 1737US8526242B2Flash memory and fabrication method and operation method for the sameHUANG RU·Filed 2011·Granted Sep 3, 2013·0 cites·3 claims
- 1834US8593848B2Programming method for programming flash memory array structureCAI YIMAO·Filed 2011·Granted Nov 26, 2013·0 cites·5 claims
- 1933US8942036B2Method for achieving four-bit storage using flash memory having splitting trench gateCAI YIMAO·Filed 2011·Granted Jan 27, 2015·0 cites·3 claims
- 2032US2012061637A13-d structured nonvolatile memory array and method for fabricating the sameCAI YIMAO·Filed 2011·Application pending·0 cites
- 2131US2012099381A1Embedded non-volatile memory cell, operation method and memory array thereofCAI YIMAO·Filed 2011·Application pending·0 cites
- 2231US2012261740A1Flash memory and method for fabricating the sameCAI YIMAO·Filed 2011·Application pending·0 cites
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