P

Inventor

KIM SEYOUNG

KR145 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

30 patents
US9852790B1Dec 26, 2017

Circuit methodology for highly linear and symmetric resistive processing unit

IBM59 citations98
US10340002B1Jul 2, 2019

In-cell differential read-out circuitry for reading signed weight values in resistive processing unit architecture

IBM16 citations94
US10115800B1Oct 30, 2018

Vertical fin bipolar junction transistor with high germanium content silicon germanium base

IBM17 citations94
US9887351B1Feb 6, 2018

Multivalent oxide cap for analog switching resistive memory

IBM19 citations94
US9601546B1Mar 21, 2017

Scaled cross bar array with undercut electrode

IBM26 citations94
US10269425B2Apr 23, 2019

Circuit methodology for highly linear and symmetric resistive processing unit

IBM13 citations92
US10248907B2Apr 2, 2019

Resistive processing unit

IBM15 citations85
US10832773B1Nov 10, 2020

Architecture for enabling zero value shifting

IBM8 citations84
US10672872B1Jun 2, 2020

Self-aligned base contacts for vertical fin-type bipolar junction transistors

IBM9 citations84
US10396126B1Aug 27, 2019

Resistive memory device with electrical gate control

IBM11 citations84
US10381074B1Aug 13, 2019

Differential weight reading of an analog memory element in crosspoint array utilizing current subtraction transistors

IBM10 citations84
US10373051B2Aug 6, 2019

Resistive processing unit

IBM13 citations84
US10347456B1Jul 9, 2019

Vertical vacuum channel transistor with minimized air gap between tip and gate

IBM8 citations84
US10186657B2Jan 22, 2019

Three-terminal metastable symmetric zero-volt battery memristive device

IBM10 citations84
US10141509B2Nov 27, 2018

Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes

IBM10 citations84
US10096773B1Oct 9, 2018

Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes

IBM12 citations84
US10079341B1Sep 18, 2018

Three-terminal non-volatile multi-state memory for cognitive computing applications

IBM13 citations84
US9997704B2Jun 12, 2018

Scaled cross bar array with undercut electrode

IBM6 citations84
US9203022B2Dec 1, 2015

Resistive random access memory devices with extremely reactive contacts

IBM8 citations83
US10153159B1Dec 11, 2018

Source and drain formation using self-aligned processes

IBM5 citations82
US11562235B2Jan 24, 2023

Activation function computation for neural networks

IBM2 citations73
US11188826B2Nov 30, 2021

Scalable architecture for implementing maximization algorithms with resistive devices

IBM1 citations73
US11157810B2Oct 26, 2021

Resistive processing unit architecture with separate weight update and inference circuitry

IBM2 citations73
US10950304B2Mar 16, 2021

Circuit methodology for highly linear and symmetric resistive processing unit

IBM2 citations73
US10886415B2Jan 5, 2021

Multi-state transistor devices with multiple threshold voltage channels

IBM3 citations73
US10839900B1Nov 17, 2020

Parasitic voltage drop compensation in large cross-point arrays

IBM3 citations73
US10763431B2Sep 1, 2020

Film stress control for memory device stack

IBM3 citations73
US10727407B2Jul 28, 2020

Resistive switching memory with replacement metal electrode

IBM2 citations73
US10651379B2May 12, 2020

Three-terminal metastable symmetric zero-volt battery memristive device

IBM1 citations73
US10593771B2Mar 17, 2020

Vertical fin-type bipolar junction transistor with self-aligned base contact

IBM2 citations73

LG DISPLAY CO LTD

15 patents

SAMSUNG ELECTRONICS CO LTD

3 patents

JONES THOMAS DAVID

1 patent

LG CHEMICAL LTD

1 patent

Showing the top 50 of 145 patents by PatentIndex Score.