Inventor
KOHNO YASUTAKA
JP19 patents
⚠️ This page may combine multiple inventors who share the name “KOHNO YASUTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS5341015AAug 23, 1994
Semiconductor device with reduced stress on gate electrode
MITSUBISHI ELECTRIC CORP80 citations96
US5496748AMar 5, 1996
Method for producing refractory metal gate electrode
MITSUBISHI ELECTRIC CORP22 citations92
US5471073ANov 28, 1995
Field effect transistor and method for producing the field effect transistor
MITSUBISHI ELECTRIC CORP25 citations92
US5358885AOct 25, 1994
Method of manufacturing a field effect transistor with a T-shaped gate electrode and reduced capacitance
MITSUBISHI ELECTRIC CORP41 citations92
US5547642AAug 20, 1996
Light ozone asher, light ashing method, and manufacturing method of semiconductor device
MITSUBISHI ELECTRIC CORP27 citations91
US5693560ADec 2, 1997
Semiconductor device electrode
MITSUBISHI ELECTRIC CORP18 citations88
US5888859AMar 30, 1999
Method of fabricating semiconductor device
MITSUBISHI ELECTRIC CORP18 citations83
US5322806AJun 21, 1994
Method of producing a semiconductor device using electron cyclotron resonance plasma CVD and substrate biasing
MITSUBISHI ELECTRIC CORP19 citations82
US4923823AMay 8, 1990
Method of fabricating a self aligned semiconductor device
MITSUBISHI ELECTRIC CORP21 citations82
US5808332ASep 15, 1998
Field-effect semiconductor device
MITSUBISHI ELECTRIC CORP10 citations74
US5888860AMar 30, 1999
Method of making field effect transistor
MITSUBISHI ELECTRIC CORP8 citations73
US5548144AAug 20, 1996
Recessed gate field effect transistor
MITSUBISHI ELECTRIC CORP10 citations73
US5391899AFeb 21, 1995
Compound semiconductor device with a particular gate structure
MITSUBISHI ELECTRIC CORP14 citations73
US5187112AFeb 16, 1993
Method for producing a semiconductor device
MITSUBISHI ELECTRIC CORP15 citations73
US5093274AMar 3, 1992
Semiconductor device and method for manufacture thereof
MITSUBISHI ELECTRIC CORP10 citations73
US4997779AMar 5, 1991
Method of making asymmetrical gate field effect transistor
MITSUBISHI ELECTRIC CORP19 citations73
US5534452AJul 9, 1996
Method for producing semiconductor device
MITSUBISHI ELECTRIC CORP10 citations69
US5250453AOct 5, 1993
Production method of a semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62