Inventor
OH REUM
KR33 patents
⚠️ This page may combine multiple inventors who share the name “OH REUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS7609584B2Oct 27, 2009
Latency control circuit and method thereof and an auto-precharge control circuit and method thereof
SAMSUNG ELECTRONICS CO LTD48 citations95
US10083722B2Sep 25, 2018
Memory device for performing internal process and operating method thereof
SAMSUNG ELECTRONICS CO LTD14 citations92
US7786752B2Aug 31, 2010
Memory systems, on-die termination (ODT) circuits, and method of ODT control
SAMSUNG ELECTRONICS CO LTD33 citations92
US10740033B2Aug 11, 2020
Memory device sampling data using control signal transmitted through TSV
SAMSUNG ELECTRONICS CO LTD12 citations85
US10592467B2Mar 17, 2020
Semiconductor memory device and method of operating a semiconductor device in a processor mode or a normal mode
SAMSUNG ELECTRONICS CO LTD9 citations84
US10410685B2Sep 10, 2019
Memory device for performing internal process and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations83
US10262699B2Apr 16, 2019
Memory device for performing internal process and operating method thereof
SAMSUNG ELECTRONICS CO LTD5 citations83
US11194505B2Dec 7, 2021
High bandwidth memory device and system device having the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US10241150B2Mar 26, 2019
Semiconductor apparatus, stack semiconductor apparatus, and test method of the stack semiconductor apparatus
SAMSUNG ELECTRONICS CO LTD18 citations82
US7436204B2Oct 14, 2008
Apparatus and method for determining on die termination modes in memory device
SAMSUNG ELECTRONICS CO LTD6 citations74
US6847559B2Jan 25, 2005
Input buffer circuit of a synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US7911862B2Mar 22, 2011
Latency control circuit and method thereof and an auto-precharge control circuit and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations73
US11538506B2Dec 27, 2022
Semiconductor device and semiconductor package including the semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10996885B2May 4, 2021
High bandwidth memory device and system device having the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11435397B2Sep 6, 2022
Wafer level methods of testing semiconductor devices using internally-generated test enable signals
SAMSUNG ELECTRONICS CO LTD3 citations70
US10224114B2Mar 5, 2019
Semiconductor device using a parallel bit operation and method of operating the same
SAMSUNG ELECTRONICS CO LTD5 citations69
US7298667B2Nov 20, 2007
Latency control circuit and method of latency control
SAMSUNG ELECTRONICS CO LTD6 citations62
US10768824B2Sep 8, 2020
Stacked memory device and a memory chip including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10331354B2Jun 25, 2019
Stacked memory device and a memory chip including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11681457B2Jun 20, 2023
High bandwidth memory device and system device having the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11334282B2May 17, 2022
High bandwidth memory device and system device having the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US12250807B2Mar 11, 2025
Semiconductor device using different types of through-silicon-vias
SAMSUNG ELECTRONICS CO LTD0 citations59
US12203980B2Jan 21, 2025
Wafer level methods of testing semiconductor devices using internally-generated test enable signals
SAMSUNG ELECTRONICS CO LTD0 citations59
US11867751B2Jan 9, 2024
Wafer level methods of testing semiconductor devices using internally-generated test enable signals
SAMSUNG ELECTRONICS CO LTD0 citations59
US10671464B2Jun 2, 2020
Memory device comprising status circuit and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations59
US11829224B2Nov 28, 2023
Method of operating memory device and memory device performing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11239210B2Feb 1, 2022
Semiconductor die for determining load of through silicon via and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US10916525B2Feb 9, 2021
Semiconductor die for determining load of through silicon via and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US11599301B2Mar 7, 2023
Semiconductor memory device and system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12299296B2May 13, 2025
Semiconductor memory device and method of adjusting operation condition of the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US10373661B2Aug 6, 2019
Stacked semiconductor device and system including the same
SAMSUNG ELECTRONICS CO LTD0 citations39