Inventor
MORIKAWA MASATOSHI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “MORIKAWA MASATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
11 patentsUS6384688B1May 7, 2002
High-frequency power amplifier module
HITACHI LTD87 citations98
US6528848B1Mar 4, 2003
Semiconductor device and a method of manufacturing the same
HITACHI LTD35 citations96
US6492872B1Dec 10, 2002
High frequency power amplifying module and wireless communication apparatus
HITACHI LTD68 citations96
US6433639B1Aug 13, 2002
High frequency power amplifier module and wireless communication system
HITACHI LTD40 citations96
US6366788B1Apr 2, 2002
Mobile telephone system
HITACHI LTD75 citations96
US6617927B2Sep 9, 2003
High frequency power amplifier module, and wireless communications system
HITACHI LTD20 citations92
US6605842B2Aug 12, 2003
Semiconductor device and a method of manufacturing the same
HITACHI LTD26 citations92
US5847521ADec 8, 1998
Method and apparatus for driving an electric motor
HITACHI LTD29 citations92
US5379230AJan 3, 1995
Semiconductor integrated circuit having semiconductor output device driving external load and microprocessor unit
HITACHI LTD41 citations92
US5638246AJun 10, 1997
Semiconductor device having a protection circuit, and electronic system including the same
HITACHI LTD25 citations91
US6535069B2Mar 18, 2003
High-frequency power amplifier module
HITACHI LTD13 citations84
RENESAS TECH CORP
8 patentsUS6865399B2Mar 8, 2005
Mobile telephone apparatus
RENESAS TECH CORP93 citations98
US7741656B2Jun 22, 2010
Semiconductor device and manufacturing the same
RENESAS TECH CORP14 citations92
US7176520B2Feb 13, 2007
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP20 citations92
US6707102B2Mar 16, 2004
Semiconductor device including an insulated gate type field effect transistor and method for fabricating the same
RENESAS TECH CORP29 citations89
US7045412B2May 16, 2006
Field-effect type semiconductor device for power amplifier
RENESAS TECH CORP9 citations74
US6815707B2Nov 9, 2004
Field-effect type semiconductor device for power amplifier
RENESAS TECH CORP8 citations74
US7176523B2Feb 13, 2007
Power mosfet having conductor plug structured contacts
RENESAS TECH CORP4 citations73
US6797594B2Sep 28, 2004
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP7 citations73
NIPPON PETROCHEMICALS CO LTD
4 patentsUS5310833AMay 10, 1994
Process for feeding catalyst to fluidized bed for vapor phase polymerization
NIPPON PETROCHEMICALS CO LTD14 citations73
US5202396AApr 13, 1993
Process for feeding catalyst to fluidized bed for vapor phase polymerization
NIPPON PETROCHEMICALS CO LTD6 citations73
US5385991AJan 31, 1995
Method for producing polyolefin
NIPPON PETROCHEMICALS CO LTD12 citations72
US5525687AJun 11, 1996
Method for producing polyolefin
NIPPON PETROCHEMICALS CO LTD0 citations51
RENESAS E JP SEMICONDUCTOR INC
3 patentsUS7087977B2Aug 8, 2006
Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
RENESAS E JP SEMICONDUCTOR INC12 citations92
US7217987B2May 15, 2007
Semiconductor device and manufacturing the same
RENESAS E JP SEMICONDUCTOR INC1 citations62
US7671381B2Mar 2, 2010
Semiconductor device and manufacturing the same
RENESAS E JP SEMICONDUCTOR INC0 citations52
RENESAS ELECTRONICS CORP
3 patentsUS7994567B2Aug 9, 2011
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations62
US7982263B2Jul 19, 2011
Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate
RENESAS ELECTRONICS CORP0 citations52
US7791131B2Sep 7, 2010
Semiconductor device and a method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations51