Inventor
MAENG DONG-CHO
KR4 patents
Patents
4 patentsUS6541328B2Apr 1, 2003
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions
SAMSUNG ELECTRONICS CO LTD125 citations95
US7482684B2Jan 27, 2009
Semiconductor device with a dopant region in a lower wire
SAMSUNG ELECTRONICS CO LTD3 citations60
US6071373AJun 6, 2000
Chemical bath having a uniform etchant overflow
SAMSUNG ELECTRONICS CO LTD6 citations58
US7629239B2Dec 8, 2009
Method of fabricating a semiconductor device with a dopant region in a lower wire
SAMSUNG ELECTRONICS CO LTD0 citations50