Inventor
PARK HO-WOO
KR3 patents
Patents
3 patentsUS6541328B2Apr 1, 2003
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions
SAMSUNG ELECTRONICS CO LTD125 citations95
US7091567B2Aug 15, 2006
Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations81
US10658413B2May 19, 2020
Semiconductor device including via plug
SAMSUNG ELECTRONICS CO LTD1 citations60