Inventor

LAI LI-SHYUE

TW28 patents

⚠️ This page may combine multiple inventors who share the name “LAI LI-SHYUE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAI LI-SHYUE

TAIWAN SEMICONDUCTOR MFG

Phase change memory device and method of manufacture thereof

Segmented MRAM memory array

MRAM cell with reduced write current

MRAM arrays and methods for writing and reading magnetic memory devices

Integrated capacitor

MRAM arrays and methods for writing and reading magnetic memory devices

Non-orthogonal write line structure in MRAM

Phase change memory devices with reduced programming current

Write line design in MRAM

Interdigitated capacitor and method for fabrication thereof

Multiple width and/or thickness write line in MRAM

Phase change memory device and method of manufacturing

System and method for passing particles on selected areas on a wafer

Reduced active area in a phase change memory structure

System and method for passing high energy particles through a mask

TAIWAN SEMICONDUCTOR MFG CO LTD

Integrated circuits with gate stacks

Memory device and method of forming the same

Cavity in metal interconnect structure

Integrated circuits with gate stacks

Metal gate finFET device

Vertical field effect transistors and methods for forming the same

LAI LI-SHYUE

Finfets and methods for forming the same

Multiple-gate transistors with reverse T-shaped fins

Multi-level flash memory cell capable of fast programming

Multiple-gate transistors with reverse T-shaped fins

Method for forming a reduced active area in a phase change memory structure

YANG YU-LIN

Metal gate finFET device and method of fabricating thereof

WANG CHAO-HSIUNG

Phase change memory device and method of manufacture thereof