Inventor
GREBS THOMAS EUGENE
US17 patents
⚠️ This page may combine multiple inventors who share the name “GREBS THOMAS EUGENE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
12 patentsUS9305852B1Apr 5, 2016
Silicon package for embedded electronic system having stacked semiconductor chips
TEXAS INSTRUMENTS INC6 citations84
US9318598B2Apr 19, 2016
Trench MOSFET having reduced gate charge
TEXAS INSTRUMENTS INC9 citations82
US11658241B2May 23, 2023
Vertical trench gate MOSFET with integrated Schottky diode
TEXAS INSTRUMENTS INC4 citations74
US10438936B2Oct 8, 2019
Photo-sensitive silicon package embedding self-powered electronic system
TEXAS INSTRUMENTS INC1 citations71
US9583611B2Feb 28, 2017
Trench MOSFET having reduced gate charge
TEXAS INSTRUMENTS INC3 citations71
US9496388B2Nov 15, 2016
Trench MOSFET having reduced gate charge
TEXAS INSTRUMENTS INC3 citations71
US11177246B2Nov 16, 2021
Photo-sensitive silicon package embedding self-powered electronic system
TEXAS INSTRUMENTS INC0 citations61
US10153220B2Dec 11, 2018
Silicon package having electrical functionality by embedded passive components
TEXAS INSTRUMENTS INC0 citations52
US10109614B2Oct 23, 2018
Silicon package for embedded electronic system having stacked semiconductor chips
TEXAS INSTRUMENTS INC0 citations52
US9818662B2Nov 14, 2017
Silicon package having electrical functionality by embedded passive components
TEXAS INSTRUMENTS INC0 citations52
US9859261B2Jan 2, 2018
Photo-sensitive silicon package embedding self-powered electronic system
TEXAS INSTRUMENTS INC0 citations50
US9640519B2May 2, 2017
Photo-sensitive silicon package embedding self-powered electronic system
TEXAS INSTRUMENTS INC0 citations50
INTERSIL CORP
4 patentsUS6238981B1May 29, 2001
Process for forming MOS-gated devices having self-aligned trenches
INTERSIL CORP55 citations92
US6077744AJun 20, 2000
Semiconductor trench MOS devices
INTERSIL CORP11 citations72
US6214673B1Apr 10, 2001
Process for forming vertical semiconductor device having increased source contact area
INTERSIL CORP10 citations65
US6211550B1Apr 3, 2001
Backmetal drain terminal with low stress and thermal resistance
INTERSIL CORP9 citations65