Inventor
KIM CHANGGYU
KR2 patents
Patents
2 patentsUS5652187AJul 29, 1997
Method for fabricating doped interlayer-dielectric film of semiconductor device using a plasma treatment
SAMSUNG ELECTRONICS CO LTD36 citations89
US5405489AApr 11, 1995
Method for fabricating an interlayer-dielectric film of a semiconductor device by using a plasma treatment prior to reflow
SAMSUNG ELECTRONICS CO LTD44 citations89