Inventor
SANO MICHIAKI
JP44 patents
⚠️ This page may combine multiple inventors who share the name “SANO MICHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
29 patentsUS9576967B1Feb 21, 2017
Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings
SANDISK TECHNOLOGIES LLC199 citations98
US10553599B1Feb 4, 2020
Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer
SANDISK TECHNOLOGIES LLC40 citations94
US10115735B2Oct 30, 2018
Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
SANDISK TECHNOLOGIES LLC24 citations94
US10790296B1Sep 29, 2020
Distortion-compensated wafer bonding method and apparatus using a temperature-controlled backside thermal expansion layer
SANDISK TECHNOLOGIES LLC19 citations93
US10217746B1Feb 26, 2019
Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same
SANDISK TECHNOLOGIES LLC32 citations93
US10181442B1Jan 15, 2019
Three-dimensional memory device having L-shaped word lines and methods of making the same
SANDISK TECHNOLOGIES LLC23 citations93
US10083982B2Sep 25, 2018
Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof
SANDISK TECHNOLOGIES LLC34 citations93
US9601502B2Mar 21, 2017
Multiheight contact via structures for a multilevel interconnect structure
SANDISK TECHNOLOGIES LLC30 citations93
US10381322B1Aug 13, 2019
Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the same
SANDISK TECHNOLOGIES LLC56 citations92
US9911790B1Mar 6, 2018
Resistive RAM including air gaps between word lines and between vertical bit lines
SANDISK TECHNOLOGIES LLC30 citations92
US10211215B1Feb 19, 2019
Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the same
SANDISK TECHNOLOGIES LLC25 citations91
US10797035B1Oct 6, 2020
Bonded assembly containing side bonding structures and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC16 citations84
US10083877B1Sep 25, 2018
Vertical field effect transistors including two-tier select gates and method of making the same
SANDISK TECHNOLOGIES LLC12 citations84
US9673304B1Jun 6, 2017
Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory
SANDISK TECHNOLOGIES LLC10 citations84
US11101289B1Aug 24, 2021
Three-dimensional memory device with composite charge storage structures and methods for forming the same
SANDISK TECHNOLOGIES LLC7 citations83
US10290803B2May 14, 2019
Three-dimensional devices with wedge-shaped contact region and method of making thereof
SANDISK TECHNOLOGIES LLC13 citations82
US10923496B2Feb 16, 2021
Three-dimensional memory device containing a replacement buried source line and methods of making the same
SANDISK TECHNOLOGIES LLC6 citations72
US10115770B2Oct 30, 2018
Methods and apparatus for three-dimensional nonvolatile memory
SANDISK TECHNOLOGIES LLC3 citations72
US11778818B2Oct 3, 2023
Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same
SANDISK TECHNOLOGIES LLC3 citations71
US10209636B1Feb 19, 2019
Exposure focus leveling method using region-differentiated focus scan patterns
SANDISK TECHNOLOGIES LLC3 citations67
US10756106B2Aug 25, 2020
Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same
SANDISK TECHNOLOGIES LLC1 citations63
US10994239B2May 4, 2021
Spiral gas adsorption apparatus and method of using the same
SANDISK TECHNOLOGIES LLC1 citations60
US12568808B2Mar 3, 2026
Three-dimensional memory device including stairless word line contact structures and method of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US12408335B2Sep 2, 2025
Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US12394668B2Aug 19, 2025
Semiconductor device having edge seal and method of making thereof without metal hard mask arcing
SANDISK TECHNOLOGIES LLC0 citations52
US11973026B2Apr 30, 2024
Three-dimensional memory device including stairless word line contact structures and method of making the same
SANDISK TECHNOLOGIES LLC0 citations52
US12185540B2Dec 31, 2024
Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement
SANDISK TECHNOLOGIES LLC0 citations51
US12416589B2Sep 16, 2025
Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imaging
SANDISK TECHNOLOGIES LLC0 citations50
US10468459B2Nov 5, 2019
Multiple vertical TFT structures for a vertical bit line architecture
SANDISK TECHNOLOGIES LLC0 citations41
SANDISK TECHNOLOGIES INC
6 patentsUS9305937B1Apr 5, 2016
Bottom recess process for an outer blocking dielectric layer inside a memory opening
SANDISK TECHNOLOGIES INC39 citations94
US9401309B2Jul 26, 2016
Multiheight contact via structures for a multilevel interconnect structure
SANDISK TECHNOLOGIES INC24 citations93
US9728499B2Aug 8, 2017
Set of stepped surfaces formation for a multilevel interconnect structure
SANDISK TECHNOLOGIES INC14 citations84
US9524901B2Dec 20, 2016
Multiheight electrically conductive via contacts for a multilevel interconnect structure
SANDISK TECHNOLOGIES INC13 citations84
US9412753B2Aug 9, 2016
Multiheight electrically conductive via contacts for a multilevel interconnect structure
SANDISK TECHNOLOGIES INC15 citations84
US9437543B2Sep 6, 2016
Composite contact via structure containing an upper portion which fills a cavity within a lower portion
SANDISK TECHNOLOGIES INC16 citations83
SANDISK 3D LLC
5 patentsUS9620712B2Apr 11, 2017
Concave word line and convex interlayer dielectric for protecting a read/write layer
SANDISK 3D LLC32 citations93
US9230905B2Jan 5, 2016
Trench multilevel contact to a 3D memory array and method of making thereof
SANDISK 3D LLC13 citations84
US9666799B2May 30, 2017
Concave word line and convex interlayer dielectric for protecting a read/write layer
SANDISK 3D LLC7 citations83
US9368601B2Jun 14, 2016
Method for forming oxide below control gate in vertical channel thin film transistor
SANDISK 3D LLC0 citations41
US9177964B2Nov 3, 2015
Methods of forming sidewall gates
SANDISK 3D LLC0 citations40