Inventor
KWEON SOON-YONG
KR16 patents
⚠️ This page may combine multiple inventors who share the name “KWEON SOON-YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
11 patentsUS7205192B2Apr 17, 2007
Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the same
HYNIX SEMICONDUCTOR INC23 citations92
US6818935B2Nov 16, 2004
Semiconductor device and method for fabricating the same
HYNIX SEMICONDUCTOR INC21 citations92
US6638775B1Oct 28, 2003
Method for fabricating semiconductor memory device
HYNIX SEMICONDUCTOR INC24 citations92
US7045071B2May 16, 2006
Method for fabricating ferroelectric random access memory device
HYNIX SEMICONDUCTOR INC11 citations84
US6963097B2Nov 8, 2005
Ferroelectric random access memory capacitor and method for manufacturing the same
HYNIX SEMICONDUCTOR INC11 citations73
US6744092B2Jun 1, 2004
Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the same
HYNIX SEMICONDUCTOR INC5 citations73
US6747302B2Jun 8, 2004
FeRAM having BLT ferroelectric layer and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations63
US7371589B2May 13, 2008
Ferroelectric random access memory capacitor and method for manufacturing the same
HYNIX SEMICONDUCTOR INC2 citations62
US6946340B2Sep 20, 2005
Method of fabricating ferroelectric memory device with photoresist and capping layer
HYNIX SEMICONDUCTOR INC3 citations62
US6812042B2Nov 2, 2004
Capacitor and method for fabricating ferroelectric memory device with the same
HYNIX SEMICONDUCTOR INC5 citations62
US6656821B2Dec 2, 2003
Fabricating ferroelectric memory device with photoresist and capping layer
HYNIX SEMICONDUCTOR INC2 citations62
HYUNDAI ELECTRONICS IND
4 patentsUS6162649ADec 19, 2000
Method of manufacturing ferroelectric memory device
HYUNDAI ELECTRONICS IND20 citations92
US6210979B1Apr 3, 2001
Method for fabricating ferroelectric capacitor improving adhesive strength between upper electrode and capping layer without polymer in FRAM device
HYUNDAI ELECTRONICS IND13 citations73
US6379977B1Apr 30, 2002
Method of manufacturing ferroelectric memory device
HYUNDAI ELECTRONICS IND10 citations70
US6391660B2May 21, 2002
Method for fabricating semiconductor memory device having ferroelectric layer
HYUNDAI ELECTRONICS IND1 citations52