Inventor

MADAN ANITA

US21 patents

⚠️ This page may combine multiple inventors who share the name “MADAN ANITA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MADAN ANITA

IBM

N-channel MOSFETs comprising dual stressors, and methods for forming the same

Method of forming nitride films with high compressive stress for improved PFET device performance

Low resistance contact structure and fabrication thereof

Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species

Capacitance monitoring using X-ray diffraction

Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology

Thin film resistors of different materials

Method for improved formation of cobalt silicide contacts in semiconductor devices

N-channel MOSFETs comprising dual stressors, and methods for forming the same

Capacitance monitoring using x-ray diffraction

Dislocation engineering using a scanned laser

Dislocation engineering using a scanned laser

Polycrystalline silicon layer with nano-grain structure and method of manufacture

Method of forming nitride films with high compressive stress for improved PFET device performance

Method for improved formation of nickel silicide contacts in semiconductor devices

Method of forming nitride films with high compressive stress for improved PFET device performance

Evaluating semiconductor wafers for pitch walking and/or epitaxial merge

APPLIED MATERIALS INC

Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion

LAI CHUNG WOH

Dislocation engineering using a scanned laser

LIU JIN PING

Integrated circuit system with carbon and non-carbon silicon

ADAM THOMAS N

Measurement of CMOS device channel strain by X-ray diffraction