Inventor

YU CHUNG-YI

TW167 patents

⚠️ This page may combine multiple inventors who share the name “YU CHUNG-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YU CHUNG-YI

TAIWAN SEMICONDUCTOR MFG CO LTD

3D trench capacitor for integrated passive devices

Capping structure to reduce dark current in image sensors

SOI substrate, semiconductor device and method for manufacturing the same

Integrated circuit with backside structures to reduce substrate warp

High electron mobility transistor (HEMT) device structure

Semiconductor structure having sets of III-V compound layers and method of forming the same

Integrated circuit with backside structures to reduce substrate warp

High electron mobility transistor and method of forming the same

Deep trench capacitor

Integrated circuit with backside structures to reduce substrate warp

3D trench capacitor for integrated passive devices

Enhanced trench isolation structure

MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portion

Manufacturing method of semiconductor device

Method to reduce breakdown failure in a MIM capacitor

Semiconductor structure having sets of III-V compound layers and method of forming

Rough buffer layer for group III-V devices on silicon

Semiconductor device having doped seed layer and method of manufacturing the same

Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer

Substrate loss reduction for semiconductor devices

Method to reduce breakdown failure in a MIM capacitor

TAIWAN SEMICONDUCTOR MFG

Method of forming self-aligned poly for embedded flash

Image sensor with light guides

Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing

High electron mobility transistor and method of forming the same

Light shield for CMOS imager

Thin sidewall multi-step HDP deposition method to achieve completely filled high aspect ratio trenches

Method of making wafer structure for backside illuminated color image sensor

High electron mobility transistor with indium nitride layer

Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing

Method of forming a high electron mobility transistor

Transistor having an ohmic contact by screen layer and method of making the same

High electron mobility transistor and method of forming the same

Light shield for CMOS imager

Split-gate memory cells and fabrication methods thereof

Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same

Image sensor with light guides

Transistor having doped substrate and method of making the same

Method of forming MIM capacitor electrodes

CHEN CHI-MING

Reducing wafer distortion through a low CTE layer

FinFET device and method of manufacturing same

Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrate

Semiconductor structure having sets of III-V compound layers and method of forming the same

LIU MARTIN

Method of wafer bonding

Method and apparatus of holding a device

CHIANG CHEN-HAO

High electron mobility transistor and method of forming the same

CHEN CHIH-MING

Structure and method for a MRAM device with an oxygen absorbing cap layer

LIN HUNG-TA

III-V multi-channel FinFETs

WANG SHIH WEI

Method for reducing topography of non-volatile memory and resulting memory cells

TAIWAN SEMICONDUCTORY MFG CO L

HDP gap-filling process for structures with extra step at side-wall