P

Inventor

LU ZHENYU

US145 patents
⚠️ This page may combine multiple inventors who share the name “LU ZHENYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

19 patents
US10283452B2May 7, 2019

Three-dimensional memory devices having a plurality of NAND strings

YANGTZE MEMORY TECH CO LTD61 citations98
US10147732B1Dec 4, 2018

Source structure of three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD66 citations98
US10553604B2Feb 4, 2020

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD21 citations94
US11133325B2Sep 28, 2021

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD14 citations93
US11785776B2Oct 10, 2023

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD6 citations85
US10930663B2Feb 23, 2021

Interconnect structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD14 citations85
US10580788B2Mar 3, 2020

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021

Three-dimensional memory devices having a plurality of NAND strings

YANGTZE MEMORY TECH CO LTD8 citations84
US10923491B2Feb 16, 2021

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations84
US10867678B2Dec 15, 2020

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD8 citations84
US10679941B2Jun 9, 2020

Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof

YANGTZE MEMORY TECH CO LTD6 citations84
US10910397B2Feb 2, 2021

Through array contact structure of three- dimensional memory device

YANGTZE MEMORY TECH CO LTD5 citations83
US10868031B2Dec 15, 2020

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD5 citations83
US10679721B2Jun 9, 2020

Structure and method for testing three-dimensional memory device

YANGTZE MEMORY TECH CO LTD9 citations83
US10680003B2Jun 9, 2020

Staircase structure for memory device

YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020

Word line contact structure for three-dimensional memory devices and fabrication methods thereof

YANGTZE MEMORY TECH CO LTD7 citations83
US10658378B2May 19, 2020

Through array contact (TAC) for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD9 citations82

SANDISK TECHNOLOGIES INC

13 patents
US9673213B1Jun 6, 2017

Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof

SANDISK TECHNOLOGIES INC77 citations98
US9530790B1Dec 27, 2016

Three-dimensional memory device containing CMOS devices over memory stack structures

SANDISK TECHNOLOGIES INC159 citations98
US9502471B1Nov 22, 2016

Multi tier three-dimensional memory devices including vertically shared bit lines

SANDISK TECHNOLOGIES INC116 citations98
US9449982B2Sep 20, 2016

Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks

SANDISK TECHNOLOGIES INC71 citations98
US9449987B1Sep 20, 2016

Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

SANDISK TECHNOLOGIES INC454 citations98
US9728551B1Aug 8, 2017

Multi-tier replacement memory stack structure integration scheme

SANDISK TECHNOLOGIES INC78 citations97
US9543318B1Jan 10, 2017

Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

SANDISK TECHNOLOGIES INC80 citations97
US9853043B2Dec 26, 2017

Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material

SANDISK TECHNOLOGIES INC49 citations94
US9842907B2Dec 12, 2017

Memory device containing cobalt silicide control gate electrodes and method of making thereof

SANDISK TECHNOLOGIES INC27 citations94
US9679906B2Jun 13, 2017

Three-dimensional memory devices containing memory block bridges

SANDISK TECHNOLOGIES INC35 citations94
US10115732B2Oct 30, 2018

Three dimensional memory device containing discrete silicon nitride charge storage regions

SANDISK TECHNOLOGIES INC33 citations93
US9530785B1Dec 27, 2016

Three-dimensional memory devices having a single layer channel and methods of making thereof

SANDISK TECHNOLOGIES INC24 citations93
US9716101B2Jul 25, 2017

Forming 3D memory cells after word line replacement

SANDISK TECHNOLOGIES INC8 citations84

SANDISK TECHNOLOGIES LLC

7 patents

MICRON TECHNOLOGY INC

4 patents

WUXI PETABYTE TECH CO LTD

3 patents

LU ZHENYU

2 patents

NUGGEHALLI JAYASIMHA

1 patent

SEARS BRANDS LLC

1 patent

Showing the top 50 of 145 patents by PatentIndex Score.