Inventor
LU ZHENYU
US145 patents
⚠️ This page may combine multiple inventors who share the name “LU ZHENYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
19 patentsUS10283452B2May 7, 2019
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD61 citations98
US10147732B1Dec 4, 2018
Source structure of three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD66 citations98
US10553604B2Feb 4, 2020
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD21 citations94
US11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US11785776B2Oct 10, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations85
US10930663B2Feb 23, 2021
Interconnect structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations85
US10580788B2Mar 3, 2020
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD8 citations84
US10923491B2Feb 16, 2021
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations84
US10867678B2Dec 15, 2020
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD8 citations84
US10679941B2Jun 9, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD6 citations84
US10910397B2Feb 2, 2021
Through array contact structure of three- dimensional memory device
YANGTZE MEMORY TECH CO LTD5 citations83
US10868031B2Dec 15, 2020
Multiple-stack three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD5 citations83
US10679721B2Jun 9, 2020
Structure and method for testing three-dimensional memory device
YANGTZE MEMORY TECH CO LTD9 citations83
US10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD7 citations83
US10658378B2May 19, 2020
Through array contact (TAC) for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD9 citations82
SANDISK TECHNOLOGIES INC
13 patentsUS9673213B1Jun 6, 2017
Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereof
SANDISK TECHNOLOGIES INC77 citations98
US9530790B1Dec 27, 2016
Three-dimensional memory device containing CMOS devices over memory stack structures
SANDISK TECHNOLOGIES INC159 citations98
US9502471B1Nov 22, 2016
Multi tier three-dimensional memory devices including vertically shared bit lines
SANDISK TECHNOLOGIES INC116 citations98
US9449982B2Sep 20, 2016
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
SANDISK TECHNOLOGIES INC71 citations98
US9449987B1Sep 20, 2016
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC454 citations98
US9728551B1Aug 8, 2017
Multi-tier replacement memory stack structure integration scheme
SANDISK TECHNOLOGIES INC78 citations97
US9543318B1Jan 10, 2017
Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
SANDISK TECHNOLOGIES INC80 citations97
US9853043B2Dec 26, 2017
Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material
SANDISK TECHNOLOGIES INC49 citations94
US9842907B2Dec 12, 2017
Memory device containing cobalt silicide control gate electrodes and method of making thereof
SANDISK TECHNOLOGIES INC27 citations94
US9679906B2Jun 13, 2017
Three-dimensional memory devices containing memory block bridges
SANDISK TECHNOLOGIES INC35 citations94
US10115732B2Oct 30, 2018
Three dimensional memory device containing discrete silicon nitride charge storage regions
SANDISK TECHNOLOGIES INC33 citations93
US9530785B1Dec 27, 2016
Three-dimensional memory devices having a single layer channel and methods of making thereof
SANDISK TECHNOLOGIES INC24 citations93
US9716101B2Jul 25, 2017
Forming 3D memory cells after word line replacement
SANDISK TECHNOLOGIES INC8 citations84
SANDISK TECHNOLOGIES LLC
7 patentsUS10269620B2Apr 23, 2019
Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
SANDISK TECHNOLOGIES LLC34 citations94
US10256248B2Apr 9, 2019
Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof
SANDISK TECHNOLOGIES LLC42 citations94
US10249640B2Apr 2, 2019
Within-array through-memory-level via structures and method of making thereof
SANDISK TECHNOLOGIES LLC52 citations94
US9935050B2Apr 3, 2018
Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof
SANDISK TECHNOLOGIES LLC25 citations94
US9780034B1Oct 3, 2017
Three-dimensional memory device containing annular etch-stop spacer and method of making thereof
SANDISK TECHNOLOGIES LLC38 citations93
US9985046B2May 29, 2018
Method of forming a staircase in a semiconductor device using a linear alignment control feature
SANDISK TECHNOLOGIES LLC17 citations86
US9779948B1Oct 3, 2017
Method of fabricating 3D NAND
SANDISK TECHNOLOGIES LLC17 citations84
MICRON TECHNOLOGY INC
4 patentsUS9853046B2Dec 26, 2017
Apparatuses and methods for forming multiple decks of memory cells
MICRON TECHNOLOGY INC19 citations93
US9362300B2Jun 7, 2016
Apparatuses and methods for forming multiple decks of memory cells
MICRON TECHNOLOGY INC21 citations93
US9437604B2Sep 6, 2016
Methods and apparatuses having strings of memory cells including a metal source
MICRON TECHNOLOGY INC21 citations92
US9431410B2Aug 30, 2016
Methods and apparatuses having memory cells including a monolithic semiconductor channel
MICRON TECHNOLOGY INC15 citations92
WUXI PETABYTE TECH CO LTD
3 patentsUS10403631B1Sep 3, 2019
Three-dimensional ferroelectric memory devices
WUXI PETABYTE TECH CO LTD72 citations98
US10861862B1Dec 8, 2020
Ferroelectric memory devices
WUXI PETABYTE TECH CO LTD6 citations84
US10600468B2Mar 24, 2020
Methods for operating ferroelectric memory cells each having multiple capacitors
WUXI PETABYTE TECH CO LTD7 citations84
LU ZHENYU
2 patentsNUGGEHALLI JAYASIMHA
1 patentSEARS BRANDS LLC
1 patentShowing the top 50 of 145 patents by PatentIndex Score.