Inventor
SHIH DING-KANG
TW36 patents
⚠️ This page may combine multiple inventors who share the name “SHIH DING-KANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS9443769B2Sep 13, 2016
Wrap-around contact
TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US11626494B2Apr 11, 2023
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US10651091B2May 12, 2020
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941367B2Apr 10, 2018
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9589838B2Mar 7, 2017
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11233134B2Jan 25, 2022
Field effect transistors with dual silicide contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11264485B2Mar 1, 2022
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855177B2Dec 26, 2023
Field effect transistors with dual silicide contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12477778B2Nov 18, 2025
Epitaxial structure for source/drain contact for semiconductor structure having fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12446269B2Oct 14, 2025
Strained nanosheets on silicon-on-insulator substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439623B2Oct 7, 2025
Field effect transistors with dual silicide contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369386B2Jul 22, 2025
Epitaxial layers in source/drain contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369341B2Jul 22, 2025
Channel structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363980B2Jul 15, 2025
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148807B2Nov 19, 2024
Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12080766B2Sep 3, 2024
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051730B2Jul 30, 2024
Source/drain feature to contact interfaces
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942533B2Mar 26, 2024
Channel structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854898B2Dec 26, 2023
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11410890B2Aug 9, 2022
Epitaxial layers in source/drain contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11362000B2Jun 14, 2022
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133223B2Sep 28, 2021
Selective epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978451B2Apr 13, 2021
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937876B2Mar 2, 2021
Source/drain feature to contact interfaces
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12598937B2Apr 7, 2026
Epitaxial formation with treatment and semiconductor devices resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10510754B2Dec 17, 2019
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10304826B2May 28, 2019
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269628B2Apr 23, 2019
FinFET low resistivity contact formation method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9899521B2Feb 20, 2018
FinFET low resistivity contact formation method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9105490B2Aug 11, 2015
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG1,595 citations99
US8823065B2Sep 2, 2014
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG1,312 citations99
US9287138B2Mar 15, 2016
FinFET low resistivity contact formation method
TAIWAN SEMICONDUCTOR MFG24 citations94
US9099494B2Aug 4, 2015
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG6 citations84
US8969201B2Mar 3, 2015
Contact structure of semiconductor device priority claim
TAIWAN SEMICONDUCTOR MFG2 citations63