P

Inventor

SHIH DING-KANG

TW36 patents
⚠️ This page may combine multiple inventors who share the name “SHIH DING-KANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

30 patents
US9443769B2Sep 13, 2016

Wrap-around contact

TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US11626494B2Apr 11, 2023

Epitaxial backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US10651091B2May 12, 2020

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941367B2Apr 10, 2018

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9589838B2Mar 7, 2017

Contact structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11233134B2Jan 25, 2022

Field effect transistors with dual silicide contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11264485B2Mar 1, 2022

Spacer structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855177B2Dec 26, 2023

Field effect transistors with dual silicide contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12477778B2Nov 18, 2025

Epitaxial structure for source/drain contact for semiconductor structure having fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12446269B2Oct 14, 2025

Strained nanosheets on silicon-on-insulator substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439623B2Oct 7, 2025

Field effect transistors with dual silicide contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369386B2Jul 22, 2025

Epitaxial layers in source/drain contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369341B2Jul 22, 2025

Channel structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363980B2Jul 15, 2025

Spacer structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148807B2Nov 19, 2024

Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12080766B2Sep 3, 2024

Epitaxial backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051730B2Jul 30, 2024

Source/drain feature to contact interfaces

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942533B2Mar 26, 2024

Channel structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854898B2Dec 26, 2023

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11410890B2Aug 9, 2022

Epitaxial layers in source/drain contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11362000B2Jun 14, 2022

Wrap-around contact on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133223B2Sep 28, 2021

Selective epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978451B2Apr 13, 2021

Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937876B2Mar 2, 2021

Source/drain feature to contact interfaces

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12598937B2Apr 7, 2026

Epitaxial formation with treatment and semiconductor devices resulting therefrom

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10510754B2Dec 17, 2019

Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10304826B2May 28, 2019

Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269628B2Apr 23, 2019

FinFET low resistivity contact formation method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9899521B2Feb 20, 2018

FinFET low resistivity contact formation method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52

TAIWAN SEMICONDUCTOR MFG

5 patents

IND TECH RES INST

1 patent