Inventor
MIZUNO GENTA
JP13 patents
⚠️ This page may combine multiple inventors who share the name “MIZUNO GENTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
9 patentsUS10529620B2Jan 7, 2020
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC23 citations94
US10608010B2Mar 31, 2020
Three-dimensional memory device containing replacement contact via structures and method of making the same
SANDISK TECHNOLOGIES LLC28 citations91
US10861869B2Dec 8, 2020
Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same
SANDISK TECHNOLOGIES LLC9 citations83
US10381372B2Aug 13, 2019
Selective tungsten growth for word lines of a three-dimensional memory device
SANDISK TECHNOLOGIES LLC10 citations82
US11437270B2Sep 6, 2022
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC2 citations73
US11532570B2Dec 20, 2022
Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the same
SANDISK TECHNOLOGIES LLC3 citations72
US11894298B2Feb 6, 2024
Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers
SANDISK TECHNOLOGIES LLC2 citations71
US11289416B2Mar 29, 2022
Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers
SANDISK TECHNOLOGIES LLC4 citations71
US11923321B2Mar 5, 2024
Three-dimensional memory device including dielectric rails for warpage reduction and method of making the same
SANDISK TECHNOLOGIES LLC0 citations59
SANDISK TECHNOLOGIES INC
4 patentsUS9159739B2Oct 13, 2015
Floating gate ultrahigh density vertical NAND flash memory
SANDISK TECHNOLOGIES INC70 citations98
US9666594B2May 30, 2017
Multi-charge region memory cells for a vertical NAND device
SANDISK TECHNOLOGIES INC35 citations94
US9401309B2Jul 26, 2016
Multiheight contact via structures for a multilevel interconnect structure
SANDISK TECHNOLOGIES INC24 citations93
US10128261B2Nov 13, 2018
Cobalt-containing conductive layers for control gate electrodes in a memory structure
SANDISK TECHNOLOGIES INC14 citations84