P

Inventor

LI MING-SHUAN

TW26 patents
⚠️ This page may combine multiple inventors who share the name “LI MING-SHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US12040405B2Jul 16, 2024

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12166071B2Dec 10, 2024

Dielectric fins with air gap and backside self-aligned contact

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11289591B1Mar 29, 2022

Bipolar junction device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12302604B2May 13, 2025

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230634B2Feb 18, 2025

Semiconductor devices and methods of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154946B2Nov 26, 2024

Semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11688767B2Jun 27, 2023

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12324210B2Jun 3, 2025

Bipolar junction transistor with gate over terminals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12051729B2Jul 30, 2024

Bipolar junction transistor with gate over terminals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11843038B2Dec 12, 2023

Bipolar junction transistor with gate over terminals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11830938B2Nov 28, 2023

Bipolar junction device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11600695B2Mar 7, 2023

Dielectric fins with air gap and backside self-aligned contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11600719B2Mar 7, 2023

Bipolar junction device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11239330B2Feb 1, 2022

Bipolar junction transistor with gate over terminals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557396B2Feb 17, 2026

Device having nanostructure electrostatic discharge structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12317602B2May 27, 2025

Forming ESD devices using multi-gate compatible processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11948936B2Apr 2, 2024

Forming ESD devices using multi-gate compatible processess

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11637099B2Apr 25, 2023

Forming ESD devices using multi-gate compatible processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12078551B2Sep 3, 2024

Complementary bipolar junction transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12527039B2Jan 13, 2026

Semiconductor devices with enhanced carrier mobility

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12336246B2Jun 17, 2025

Semiconductor structures with a hybrid substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11837459B2Dec 5, 2023

Method and structure for diodes with backside contacts

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12213297B2Jan 28, 2025

Semiconductor devices with threshold voltage modulation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

LU WEI-YUAN

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent