Inventor
LI MING-SHUAN
TW26 patents
⚠️ This page may combine multiple inventors who share the name “LI MING-SHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS12040405B2Jul 16, 2024
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12166071B2Dec 10, 2024
Dielectric fins with air gap and backside self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11289591B1Mar 29, 2022
Bipolar junction device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12302604B2May 13, 2025
Multi-gate device and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230634B2Feb 18, 2025
Semiconductor devices and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154946B2Nov 26, 2024
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11688767B2Jun 27, 2023
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12324210B2Jun 3, 2025
Bipolar junction transistor with gate over terminals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12051729B2Jul 30, 2024
Bipolar junction transistor with gate over terminals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11843038B2Dec 12, 2023
Bipolar junction transistor with gate over terminals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11830938B2Nov 28, 2023
Bipolar junction device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11600695B2Mar 7, 2023
Dielectric fins with air gap and backside self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11600719B2Mar 7, 2023
Bipolar junction device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11239330B2Feb 1, 2022
Bipolar junction transistor with gate over terminals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557396B2Feb 17, 2026
Device having nanostructure electrostatic discharge structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12317602B2May 27, 2025
Forming ESD devices using multi-gate compatible processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11948936B2Apr 2, 2024
Forming ESD devices using multi-gate compatible processess
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11637099B2Apr 25, 2023
Forming ESD devices using multi-gate compatible processes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12078551B2Sep 3, 2024
Complementary bipolar junction transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12527039B2Jan 13, 2026
Semiconductor devices with enhanced carrier mobility
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12336246B2Jun 17, 2025
Semiconductor structures with a hybrid substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11837459B2Dec 5, 2023
Method and structure for diodes with backside contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12213297B2Jan 28, 2025
Semiconductor devices with threshold voltage modulation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50