Inventor

CHENG MING-LUNG

TW24 patents

⚠️ This page may combine multiple inventors who share the name “CHENG MING-LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHENG MING-LUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Method and apparatus of forming an integrated circuit with a strained channel region

FinFET device with different liners for PFET and NFET and method of fabricating thereof

Dielectric fins with air gap and backside self-aligned contact

Semiconductor device and method

Semiconductor device with tunable channel layer usage and methods of fabrication thereof

Semiconductor device structure

Semiconductor device and method

FinFET device with different liners for PFET and NFET and method of fabricating thereof

Semiconductor device structure and method for forming the same

FinFET device with different liners for PFET and NFET and method of fabricating thereof

Integrated circuit structure with source/drain spacers

Isolation for multigate devices

Semiconductor devices with air gaps and the method thereof

Source/drain spacer with air gap in semiconductor devices and methods of fabricating the same

Integrated circuit structure with source/drain spacers

Dielectric fins with air gap and backside self-aligned contact

Method for forming semiconductor device structure with a cap layer

Semiconductor devices and methods of fabricating the same

Multi-channel devices and method with anti-punch through process

Multi-gate devices and method of forming the same

TAIWAN SEMICONDUCTOR MFG

Method for enhancing channel strain

Methods of forming integrated circuits

Semiconductor structure

CHENG MING-LUNG

Strained channel integrated circuit devices