Inventor
NAIK MEHUL
US59 patents
⚠️ This page may combine multiple inventors who share the name “NAIK MEHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
45 patentsUS6656837B2Dec 2, 2003
Method of eliminating photoresist poisoning in damascene applications
APPLIED MATERIALS INC285 citations98
US6548396B2Apr 15, 2003
Method of producing an interconnect structure for an integrated circuit
APPLIED MATERIALS INC268 citations98
US6245662B1Jun 12, 2001
Method of producing an interconnect structure for an integrated circuit
APPLIED MATERIALS INC114 citations97
US6168726B1Jan 2, 2001
Etching an oxidized organo-silane film
APPLIED MATERIALS INC107 citations97
US7928003B2Apr 19, 2011
Air gap interconnects using carbon-based films
APPLIED MATERIALS INC30 citations93
US7115534B2Oct 3, 2006
Dielectric materials to prevent photoresist poisoning
APPLIED MATERIALS INC39 citations93
US6458684B1Oct 1, 2002
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC42 citations93
US6139905AOct 31, 2000
Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
APPLIED MATERIALS INC24 citations93
US6054380AApr 25, 2000
Method and apparatus for integrating low dielectric constant materials into a multilevel metallization and interconnect structure
APPLIED MATERIALS INC27 citations93
US9761489B2Sep 12, 2017
Self-aligned interconnects formed using substractive techniques
APPLIED MATERIALS INC20 citations92
US7244672B2Jul 17, 2007
Selective etching of organosilicate films over silicon oxide stop etch layers
APPLIED MATERIALS INC36 citations92
US7205228B2Apr 17, 2007
Selective metal encapsulation schemes
APPLIED MATERIALS INC40 citations92
US7879683B2Feb 1, 2011
Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
APPLIED MATERIALS INC35 citations91
US7811924B2Oct 12, 2010
Air gap formation and integration using a patterning cap
APPLIED MATERIALS INC28 citations90
US9425092B2Aug 23, 2016
Methods for producing interconnects in semiconductor devices
APPLIED MATERIALS INC8 citations84
US7618889B2Nov 17, 2009
Dual damascene fabrication with low k materials
APPLIED MATERIALS INC13 citations84
US6077781AJun 20, 2000
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC12 citations74
US11410885B2Aug 9, 2022
Fully aligned subtractive processes and electronic devices therefrom
APPLIED MATERIALS INC2 citations73
US10643895B2May 5, 2020
Self-aligned interconnects formed using subtractive techniques
APPLIED MATERIALS INC5 citations73
US10062607B2Aug 28, 2018
Methods for producing interconnects in semiconductor devices
APPLIED MATERIALS INC2 citations73
US9847289B2Dec 19, 2017
Protective via cap for improved interconnect performance
APPLIED MATERIALS INC2 citations73
US9711397B1Jul 18, 2017
Cobalt resistance recovery by hydrogen anneal
APPLIED MATERIALS INC2 citations73
US9570345B1Feb 14, 2017
Cobalt resistance recovery by hydrogen anneal
APPLIED MATERIALS INC3 citations73
US11164780B2Nov 2, 2021
Process integration approach for selective metal via fill
APPLIED MATERIALS INC3 citations72
US10204764B2Feb 12, 2019
Methods for forming a metal silicide interconnection nanowire structure
APPLIED MATERIALS INC2 citations72
US10109520B2Oct 23, 2018
Methods for depositing dielectric barrier layers and aluminum containing etch stop layers
APPLIED MATERIALS INC2 citations72
US7034409B2Apr 25, 2006
Method of eliminating photoresist poisoning in damascene applications
APPLIED MATERIALS INC5 citations72
US11967527B2Apr 23, 2024
Fully aligned subtractive processes and electronic devices therefrom
APPLIED MATERIALS INC0 citations63
US11205589B2Dec 21, 2021
Methods and apparatuses for forming interconnection structures
APPLIED MATERIALS INC0 citations63
US7572734B2Aug 11, 2009
Etch depth control for dual damascene fabrication process
APPLIED MATERIALS INC2 citations63
US12543547B2Feb 3, 2026
Method of dielectric material fill and treatment
APPLIED MATERIALS INC0 citations62
US12046508B2Jul 23, 2024
Method of dielectric material fill and treatment
APPLIED MATERIALS INC0 citations62
US11955382B2Apr 9, 2024
Reverse selective etch stop layer
APPLIED MATERIALS INC0 citations62
US11908696B2Feb 20, 2024
Methods and devices for subtractive self-alignment
APPLIED MATERIALS INC0 citations62
US11615984B2Mar 28, 2023
Method of dielectric material fill and treatment
APPLIED MATERIALS INC0 citations62
US11289342B2Mar 29, 2022
Damage free metal conductor formation
APPLIED MATERIALS INC0 citations62
US11257677B2Feb 22, 2022
Methods and devices for subtractive self-alignment
APPLIED MATERIALS INC0 citations62
US10685849B1Jun 16, 2020
Damage free metal conductor formation
APPLIED MATERIALS INC1 citations62
US10438849B2Oct 8, 2019
Microwave anneal to improve CVD metal gap-fill and throughput
APPLIED MATERIALS INC1 citations62
US11776806B2Oct 3, 2023
Multi-step pre-clean for selective metal gap fill
APPLIED MATERIALS INC0 citations61
US11626288B2Apr 11, 2023
Integrated contact silicide with tunable work functions
APPLIED MATERIALS INC0 citations61
US11380536B2Jul 5, 2022
Multi-step pre-clean for selective metal gap fill
APPLIED MATERIALS INC1 citations61
US12002705B2Jun 4, 2024
Methods and apparatus for forming backside power rails
APPLIED MATERIALS INC0 citations56
US11749532B2Sep 5, 2023
Methods and apparatus for processing a substrate
APPLIED MATERIALS INC0 citations52
US11508617B2Nov 22, 2022
Method of forming interconnect for semiconductor device
APPLIED MATERIALS INC0 citations52
RAJAGOPALAN NAGARAJAN
3 patentsUS8563095B2Oct 22, 2013
Silicon nitride passivation layer for covering high aspect ratio features
RAJAGOPALAN NAGARAJAN11 citations81
US8329575B2Dec 11, 2012
Fabrication of through-silicon vias on silicon wafers
RAJAGOPALAN NAGARAJAN6 citations81
US8283237B2Oct 9, 2012
Fabrication of through-silicon vias on silicon wafers
RAJAGOPALAN NAGARAJAN11 citations81
MICROMATERIALS LLC
2 patentsShowing the top 50 of 59 patents by PatentIndex Score.