Inventor
TANNO MASAYUKI
JP28 patents
Patents
28 patentsUS5519803AMay 21, 1996
Optical waveguide
SHINETSU CHEMICAL CO42 citations92
US5161049ANov 3, 1992
Optical isolator and method for preparing same
SHINETSU CHEMICAL CO20 citations82
US4968954ANov 6, 1990
Epitaxial layer-bearing wafer of rare earth gallium garnet for MSW device
SHINETSU CHEMICAL CO22 citations82
US5785752AJul 28, 1998
Method for the preparation of magnetic oxide garnet single crystal for magnetostatic wave device
SHINETSU CHEMICAL CO7 citations74
US5479290ADec 26, 1995
Faraday's rotator and optical isolator
SHINETSU CHEMICAL CO16 citations74
US5449942ASep 12, 1995
Rare earth oxide-based garnet single crystal for magnetostatic device and method for the preparation thereof
SHINETSU CHEMICAL CO7 citations74
US5198297AMar 30, 1993
Magnetostatic-wave chip and device comprising a rare earth iron-based oxide garnet
SHINETSU CHEMICAL CO7 citations74
US6483645B1Nov 19, 2002
Garnet crystal for Faraday rotator and optical isolator having the same
SHINETSU CHEMICAL CO7 citations73
US6351331B1Feb 26, 2002
Faraday rotator and magneto-optical element using the same
SHINETSU CHEMICAL CO9 citations73
US10756254B2Aug 25, 2020
Composite substrate and method of manufacturing composite substrate
SHINETSU CHEMICAL CO2 citations72
US12136907B2Nov 5, 2024
Composite substrate for surface acoustic wave device and manufacturing method thereof
SHINETSU CHEMICAL CO0 citations62
US11804818B2Oct 31, 2023
Method of manufacturing composite substrate
SHINETSU CHEMICAL CO1 citations62
US11800805B2Oct 24, 2023
Composite substrate, surface acoustic wave device, and method for manufacturing composite substrate
SHINETSU CHEMICAL CO1 citations62
US11606073B2Mar 14, 2023
Method of producing composite substrate for surface acoustic wave device
SHINETSU CHEMICAL CO0 citations62
US11245377B2Feb 8, 2022
Composite substrate and method of manufacturing composite substrate
SHINETSU CHEMICAL CO0 citations62
US11128277B2Sep 21, 2021
Method for producing composite wafer
SHINETSU CHEMICAL CO0 citations62
US10886890B2Jan 5, 2021
Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate
SHINETSU CHEMICAL CO0 citations62
US6163404ADec 19, 2000
Optical isolator and optical part having heat-resistant anti-reflection coating
SHINETSU CHEMICAL CO4 citations62
US5872652AFeb 16, 1999
Optical isolator and optical part having heat-resistant anti-reflection coating
SHINETSU CHEMICAL CO4 citations62
US5808525ASep 15, 1998
Thin film chip of magnetic oxide garnet and magnetostatic surface wave device therewith
SHINETSU CHEMICAL CO4 citations62
US5616176AApr 1, 1997
Oxide garnet single crystal
SHINETSU CHEMICAL CO6 citations62
US11057014B2Jul 6, 2021
Bonded substrate and a manufacturing method thereof, and a surface acoustic wave device using the said bonded substrate
SHINETSU CHEMICAL CO0 citations61
US11021810B2Jun 1, 2021
Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
SHINETSU CHEMICAL CO0 citations61
US6232850B1May 15, 2001
Magnetostatic wave device with specified angles relating the transducer, magnetic thin film, and bias magnetic field
SHINETSU CHEMICAL CO4 citations60
US5883555AMar 16, 1999
Magnetostatic wave device
SHINETSU CHEMICAL CO1 citations50
US10418543B2Sep 17, 2019
Method of manufacturing an oxide single crystal substrate for a surface acoustic wave device
SHINETSU CHEMICAL CO0 citations40
US10707829B2Jul 7, 2020
Lithium tantalate single crystal substrate for a surface acoustic wave device and a device using the same, and a manufacturing method thereof and an inspection method thereof
SHINETSU CHEMICAL CO0 citations39
US5880651AMar 9, 1999
Reflection-type S/N enhancer
SHINETSU CHEMICAL CO0 citations39