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Inventor
NAITOH YASUHISA
JP
12 patents
⚠️ This page may combine multiple inventors who share the name “NAITOH YASUHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV OSAKA
2 patents
US7250602B2
Jul 31, 2007
Probe device
UNIV OSAKA
10 citations
83
US7088120B2
Aug 8, 2006
Method and apparatus for measuring and evaluating local electrical characteristics of a sample having a nano-scale structure
UNIV OSAKA
4 citations
58
NAT INST OF ADVANCED IND SCIEN
2 patents
US7902586B2
Mar 8, 2011
Nonvolatile memory device with nano gap electrode
NAT INST OF ADVANCED IND SCIEN
7 citations
82
US8022383B2
Sep 20, 2011
Two-terminal resistance switching element with silicon, and semiconductor device
NAT INST OF ADVANCED IND SCIEN
3 citations
59
AIST
2 patents
US12232436B2
Feb 18, 2025
Information processing device and method of driving information processing device
AIST
0 citations
62
US10418538B2
Sep 17, 2019
Thermoelectric material and thermoelectric module
AIST
0 citations
44
FURUTA SHIGEO
2 patents
US8653912B2
Feb 18, 2014
Switching element
FURUTA SHIGEO
1 citations
49
US8395185B2
Mar 12, 2013
Switching element
FURUTA SHIGEO
1 citations
48
NAITOH YASUHISA
1 patent
US8093518B2
Jan 10, 2012
Switching element relying on nanogap electrodes
NAITOH YASUHISA
6 citations
66
NUVOTON TECHNOLOGY CORP JAPAN
1 patent
US11889776B2
Jan 30, 2024
Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element
NUVOTON TECHNOLOGY CORP JAPAN
0 citations
49
FUNAI ELECTRIC CO
1 patent
US9236569B2
Jan 12, 2016
Storage element
FUNAI ELECTRIC CO
0 citations
49
FUNAI EAA TECH RES INST INC
1 patent
US7990751B2
Aug 2, 2011
Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
FUNAI EAA TECH RES INST INC
1 citations
49