Inventor
CHANG HUN-HSIEN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HUN-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
15 patentsUS6249410B1Jun 19, 2001
ESD protection circuit without overstress gate-driven effect
TAIWAN SEMICONDUCTOR MFG222 citations99
US6144542ANov 7, 2000
ESD bus lines in CMOS IC's for whole-chip ESD protection
TAIWAN SEMICONDUCTOR MFG215 citations99
US6765771B2Jul 20, 2004
SCR devices with deep-N-well structure for on-chip ESD protection circuits
TAIWAN SEMICONDUCTOR MFG122 citations98
US6566715B1May 20, 2003
Substrate-triggered technique for on-chip ESD protection circuit
TAIWAN SEMICONDUCTOR MFG89 citations98
US6011681AJan 4, 2000
Whole-chip ESD protection for CMOS ICs using bi-directional SCRs
TAIWAN SEMICONDUCTOR MFG114 citations98
US5959820ASep 28, 1999
Cascode LVTSCR and ESD protection circuit
TAIWAN SEMICONDUCTOR MFG117 citations98
US6671153B1Dec 30, 2003
Low-leakage diode string for use in the power-rail ESD clamp circuits
TAIWAN SEMICONDUCTOR MFG102 citations97
US6514839B1Feb 4, 2003
ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations
TAIWAN SEMICONDUCTOR MFG46 citations96
US6002568ADec 14, 1999
ESD protection scheme for mixed-voltage CMOS integrated circuits
TAIWAN SEMICONDUCTOR MFG66 citations96
US6388850B1May 14, 2002
Gate-coupled ESD protection circuit without transient leakage
TAIWAN SEMICONDUCTOR MFG68 citations95
US6885529B2Apr 26, 2005
CDM ESD protection design using deep N-well structure
TAIWAN SEMICONDUCTOR MFG38 citations92
US6838734B2Jan 4, 2005
ESD implantation in deep-submicron CMOS technology for high-voltage-tolerant applications
TAIWAN SEMICONDUCTOR MFG35 citations92
US6576958B2Jun 10, 2003
ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process
TAIWAN SEMICONDUCTOR MFG46 citations92
US7054122B2May 30, 2006
VDDCORE to VSS ESD clamp made of core device
TAIWAN SEMICONDUCTOR MFG12 citations84
US6444404B1Sep 3, 2002
Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions
TAIWAN SEMICONDUCTOR MFG12 citations74