P

Inventor

CHANG HUN-HSIEN

TW17 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HUN-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

15 patents
US6249410B1Jun 19, 2001

ESD protection circuit without overstress gate-driven effect

TAIWAN SEMICONDUCTOR MFG222 citations99
US6144542ANov 7, 2000

ESD bus lines in CMOS IC's for whole-chip ESD protection

TAIWAN SEMICONDUCTOR MFG215 citations99
US6765771B2Jul 20, 2004

SCR devices with deep-N-well structure for on-chip ESD protection circuits

TAIWAN SEMICONDUCTOR MFG122 citations98
US6566715B1May 20, 2003

Substrate-triggered technique for on-chip ESD protection circuit

TAIWAN SEMICONDUCTOR MFG89 citations98
US6011681AJan 4, 2000

Whole-chip ESD protection for CMOS ICs using bi-directional SCRs

TAIWAN SEMICONDUCTOR MFG114 citations98
US5959820ASep 28, 1999

Cascode LVTSCR and ESD protection circuit

TAIWAN SEMICONDUCTOR MFG117 citations98
US6671153B1Dec 30, 2003

Low-leakage diode string for use in the power-rail ESD clamp circuits

TAIWAN SEMICONDUCTOR MFG102 citations97
US6514839B1Feb 4, 2003

ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations

TAIWAN SEMICONDUCTOR MFG46 citations96
US6002568ADec 14, 1999

ESD protection scheme for mixed-voltage CMOS integrated circuits

TAIWAN SEMICONDUCTOR MFG66 citations96
US6388850B1May 14, 2002

Gate-coupled ESD protection circuit without transient leakage

TAIWAN SEMICONDUCTOR MFG68 citations95
US6885529B2Apr 26, 2005

CDM ESD protection design using deep N-well structure

TAIWAN SEMICONDUCTOR MFG38 citations92
US6838734B2Jan 4, 2005

ESD implantation in deep-submicron CMOS technology for high-voltage-tolerant applications

TAIWAN SEMICONDUCTOR MFG35 citations92
US6576958B2Jun 10, 2003

ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process

TAIWAN SEMICONDUCTOR MFG46 citations92
US7054122B2May 30, 2006

VDDCORE to VSS ESD clamp made of core device

TAIWAN SEMICONDUCTOR MFG12 citations84
US6444404B1Sep 3, 2002

Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions

TAIWAN SEMICONDUCTOR MFG12 citations74

IND TECH RES INST

1 patent

UNITED MICROELECTRONICS CORP

1 patent