Inventor
HOEPFNER JOACHIM
DE18 patents
⚠️ This page may combine multiple inventors who share the name “HOEPFNER JOACHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
9 patentsUS6018174AJan 25, 2000
Bottle-shaped trench capacitor with epi buried layer
SIEMENS AG114 citations98
US5945704AAug 31, 1999
Trench capacitor with epi buried layer
SIEMENS AG86 citations96
US6008103ADec 28, 1999
Method for forming trench capacitors in an integrated circuit
SIEMENS AG45 citations92
US4092210AMay 30, 1978
Process for the production of etched structures in a surface of a solid body by ionic etching
SIEMENS AG31 citations92
US6313495B1Nov 6, 2001
Stack capacitor with improved plug conductivity
SIEMENS AG9 citations73
US6046059AApr 4, 2000
Method of forming stack capacitor with improved plug conductivity
SIEMENS AG13 citations73
US5093272AMar 3, 1992
Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors
SIEMENS AG16 citations73
US6068928AMay 30, 2000
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
SIEMENS AG8 citations72
US5057668AOct 15, 1991
Device for the implementation of a curing process at a semiconductor wafer and method for curing a semiconductor wafer
SIEMENS AG16 citations71
INFINEON TECHNOLOGIES AG
8 patentsUS6465370B1Oct 15, 2002
Low leakage, low capacitance isolation material
INFINEON TECHNOLOGIES AG79 citations96
US6316275B2Nov 13, 2001
Method for fabricating a semiconductor component
INFINEON TECHNOLOGIES AG24 citations92
US6265279B1Jul 24, 2001
Method for fabricating a trench capacitor
INFINEON TECHNOLOGIES AG29 citations92
US6475859B1Nov 5, 2002
Plasma doping for DRAM with deep trenches and hemispherical grains
INFINEON TECHNOLOGIES AG10 citations74
US6531378B2Mar 11, 2003
Method for processing wafer by applying layer to protect the backside during a tempering step and removing contaminated portions of the layer
INFINEON TECHNOLOGIES AG12 citations73
US6329703B1Dec 11, 2001
Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact
INFINEON TECHNOLOGIES AG9 citations72
US6790676B2Sep 14, 2004
Method for producing a ferroelectric layer
INFINEON TECHNOLOGIES AG7 citations69
US6645855B2Nov 11, 2003
Method for fabricating an integrated semiconductor product
INFINEON TECHNOLOGIES AG2 citations62