Inventor
QIAO JIANMIN
US17 patents
⚠️ This page may combine multiple inventors who share the name “QIAO JIANMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
11 patentsUS6322716B1Nov 27, 2001
Method for conditioning a plasma etch chamber
CYPRESS SEMICONDUCTOR CORP222 citations97
US6399512B1Jun 4, 2002
Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer
CYPRESS SEMICONDUCTOR CORP83 citations96
US6350665B1Feb 26, 2002
Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor device
CYPRESS SEMICONDUCTOR CORP55 citations96
US6803318B1Oct 12, 2004
Method of forming self aligned contacts
CYPRESS SEMICONDUCTOR CORP94 citations95
US5976900ANov 2, 1999
Method of reducing impurity contamination in semiconductor process chambers
CYPRESS SEMICONDUCTOR CORP52 citations93
US6734108B1May 11, 2004
Semiconductor structure and method of making contacts in a semiconductor structure
CYPRESS SEMICONDUCTOR CORP21 citations92
US6372634B1Apr 16, 2002
Plasma etch chemistry and method of improving etch control
CYPRESS SEMICONDUCTOR CORP26 citations92
US6635566B1Oct 21, 2003
Method of making metallization and contact structures in an integrated circuit
CYPRESS SEMICONDUCTOR CORP31 citations89
US6693042B1Feb 17, 2004
Method for etching a dielectric layer formed upon a barrier layer
CYPRESS SEMICONDUCTOR CORP17 citations82
US7183222B2Feb 27, 2007
Dual damascene structure and method of making
CYPRESS SEMICONDUCTOR CORP7 citations73
US6373679B1Apr 16, 2002
Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
CYPRESS SEMICONDUCTOR CORP11 citations73
APPLIED MATERIALS INC
4 patentsUS6136685AOct 24, 2000
High deposition rate recipe for low dielectric constant films
APPLIED MATERIALS INC343 citations98
US5885356AMar 23, 1999
Method of reducing residue accumulation in CVD chamber using ceramic lining
APPLIED MATERIALS INC154 citations98
US6375744B2Apr 23, 2002
Sequential in-situ heating and deposition of halogen-doped silicon oxide
APPLIED MATERIALS INC17 citations91
US6228781B1May 8, 2001
Sequential in-situ heating and deposition of halogen-doped silicon oxide
APPLIED MATERIALS INC25 citations91