Inventor · disambiguated record
Mickael Gros-Jean
Also filed as: GROS-JEAN MICKAEL · GROS-JEAN MICKAËL
10 granted patents·3 pending applications·523 citations·filing 2003–2021
84Inventor score
Files withST MICROELECTRONICS CROLLES 2 SAS6GROS-JEAN MICKAEL3ST MICROELECTRONICS SA2GOURHANT OLIVIER1ST MICROELECTRONICS CROLLES 21
Top patents by PatentIndex Score
13 records- 0194US8667654B2Method for manufacturing a polycrystalline dielectric layerGROS-JEAN MICKAEL·Filed 2011·Granted Mar 11, 2014·515 cites·13 claims
- 0283US9685475B2Back-illuminated integrated imaging device with simplified interconnect routingST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Jun 20, 2017·5 cites·36 claims
- 0380US11043591B2FeFET transistorST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jun 22, 2021·3 cites·11 claims
- 0463US11677024B2FeFET transistorST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Jun 13, 2023·0 cites·23 claims
- 0562US9536599B1Optoelectronic device, in particular memory deviceST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Jan 3, 2017·0 cites·21 claims
- 0662US9530489B2Optoelectronic device, in particular memory deviceST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Dec 27, 2016·0 cites·29 claims
- 0753US9525019B2Method for manufacturing a polycrystalline dielectric layerST MICROELECTRONICS CROLLES 2 SAS·Filed 2013·Granted Dec 20, 2016·0 cites·21 claims
- 0849US2008023436A1Deposition by adsorption under an electrical fieldST MICROELECTRONICS SA·Filed 2007·Application pending·0 cites
- 0945US8709907B2Method for manufacturing and reoxidizing a TiN/Ta2O5/TiN capacitorGROS-JEAN MICKAEL·Filed 2012·Granted Apr 29, 2014·0 cites·7 claims
- 1040US8878331B2Method for manufacturing insulated-gate MOS transistorsST MICROELECTRONICS CROLLES 2·Filed 2012·Granted Nov 4, 2014·0 cites·18 claims
- 1136US2012200984A1Method for manufacturing a tin/ta2o5/tin capacitorGROS-JEAN MICKAEL·Filed 2012·Application pending·0 cites
- 1230US8802575B2Method for forming the gate insulator of a MOS transistorGOURHANT OLIVIER·Filed 2012·Granted Aug 12, 2014·0 cites·7 claims
- 1330US2004187778A1Process and device for producing a layer of tantalum pentoxide on a carrier material, in particular titanium nitride, and integrated circuit incorporating a layer of tantalum pentoxideST MICROELECTRONICS SA·Filed 2003·Application pending·0 cites
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