Inventor

ZHANG MINXIAN

US28 patents

⚠️ This page may combine multiple inventors who share the name “ZHANG MINXIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHANG MINXIAN

TETRAMEM INC

Low current RRAM-based crossbar array circuits implemented with interface engineering technologies

1T2R RRAM cell and common reactive electrode in crossbar array circuits

RRAM crossbar array circuits with specialized interface layers for low current operation

Tunneling-based selectors incorporating van der Waals (vdW) materials

Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operation

Ferroelectric non-volatile memory devices

Resistive random-access memory devices with multi-component electrodes

Integrated sensing and machine learning processing devices

Resistive random-access memory devices with multi-component electrodes

Low current RRAM-based crossbar array circuits implemented with interface engineering technologies

Increasing selector surface area in crossbar array circuits

Methods for fabricating resistive random-access memory stacks

Low current RRAM-based crossbar array circuit implemented with switching oxide engineering technologies

Increasing selector surface area in crossbar array circuits

RRAM-based crossbar array circuits with increased temperature stability for analog computing

Implementing memristor crossbar array using non-filamentary RRAM cells

CMOS-compatible resistive random-access memory devices with a via device structure

Resistive random-access memory devices with metal-nitride compound electrodes

Forming-free random-access memory (RRAM) devices

Resistive random-access memory devices with engineered electronic defects and methods for making the same

Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers

Patterning oxidation resistant electrode in crossbar array circuits

Reducing RRAM relaxation in crossbar arrays for low current applications

Providing thermal shield to RRAM cells

Mechanisms for programming multilevel memory devices with variable memory windows

HEWLETT PACKARD DEVELOPMENT CO

Printhead with a memristor

Memristors with oxide switching layers

HEWLETT PACKARD ENTPR DEV LP

Memory devices with volatile and non-volatile behavior