Inventor
MATSUSE KIMIHIRO
JP18 patents
Patents
18 patentsUS6861356B2Mar 1, 2005
Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
TOKYO ELECTRON LTD245 citations99
US6576062B2Jun 10, 2003
Film forming apparatus and film forming method
TOKYO ELECTRON LTD612 citations99
US6454909B1Sep 24, 2002
Method and apparatus for forming a film on an object to be processed
TOKYO ELECTRON LTD351 citations98
US5647945AJul 15, 1997
Vacuum processing apparatus
TOKYO ELECTRON LTD308 citations98
US5951772ASep 14, 1999
Vacuum processing apparatus
TOKYO ELECTRON LTD104 citations97
US6251188B1Jun 26, 2001
Apparatus for forming laminated thin films or layers
TOKYO ELECTRON LTD60 citations96
US6022586AFeb 8, 2000
Method and apparatus for forming laminated thin films or layers
TOKYO ELECTRON LTD54 citations96
US5997651ADec 7, 1999
Heat treatment apparatus
TOKYO ELECTRON LTD68 citations96
US6919273B1Jul 19, 2005
Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
TOKYO ELECTRON LTD21 citations92
US6838376B2Jan 4, 2005
Method of forming semiconductor wiring structures
TOKYO ELECTRON LTD27 citations92
US6251191B1Jun 26, 2001
Processing apparatus and processing system
TOKYO ELECTRON LTD37 citations92
US4913790AApr 3, 1990
Treating method
TOKYO ELECTRON LTD50 citations91
US7829144B2Nov 9, 2010
Method of forming a metal film for electrode
TOKYO ELECTRON LTD7 citations74
US7153773B2Dec 26, 2006
TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
TOKYO ELECTRON LTD9 citations73
US6404021B1Jun 11, 2002
Laminated structure and a method of forming the same
TOKYO ELECTRON LTD8 citations73
US6245673B1Jun 12, 2001
Method of forming tungsten silicide film
TOKYO ELECTRON LTD7 citations73
US6489208B2Dec 3, 2002
Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon
TOKYO ELECTRON LTD0 citations51
US11114321B2Sep 7, 2021
Apparatus and method for real-time sensing of properties in industrial manufacturing equipment
TOKYO ELECTRON LTD0 citations47