Inventor
LIAO HSIU-HAN
TW31 patents
⚠️ This page may combine multiple inventors who share the name “LIAO HSIU-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WINBOND ELECTRONICS CORP
23 patentsUS7906396B1Mar 15, 2011
Flash memory and method of fabricating the same
WINBOND ELECTRONICS CORP35 citations92
US11823738B2Nov 21, 2023
Resistive memory apparatus
WINBOND ELECTRONICS CORP0 citations62
US12471277B2Nov 11, 2025
Memory device and method of manufacturing the same
WINBOND ELECTRONICS CORP0 citations61
US11974428B2Apr 30, 2024
Memory device and method of manufacturing the same
WINBOND ELECTRONICS CORP0 citations61
US11877447B2Jan 16, 2024
Manufacturing method of semiconductor structure and flash memory
WINBOND ELECTRONICS CORP0 citations61
US11805644B2Oct 31, 2023
Manufacturing method of memory device
WINBOND ELECTRONICS CORP0 citations61
US11678484B2Jun 13, 2023
Semiconductor structure and manufacturing method thereof and flash memory
WINBOND ELECTRONICS CORP1 citations61
US11257833B2Feb 22, 2022
Memory device and manufacturing method thereof
WINBOND ELECTRONICS CORP0 citations61
US11251273B2Feb 15, 2022
Non-volatile memory device and method for manufacturing the same
WINBOND ELECTRONICS CORP0 citations61
US10615087B2Apr 7, 2020
Semiconductor wafer with test key structure
WINBOND ELECTRONICS CORP1 citations61
US12438004B2Oct 7, 2025
Method for forming semiconductor device that includes flash memory
WINBOND ELECTRONICS CORP0 citations59
US11257922B2Feb 22, 2022
Self-aligned contact and method for forming the same
WINBOND ELECTRONICS CORP0 citations58
US12520487B2Jan 6, 2026
Semiconductor structure and method of forming the same
WINBOND ELECTRONICS CORP0 citations56
US7656704B2Feb 2, 2010
Multi-level operation in nitride storage memory cell
WINBOND ELECTRONICS CORP2 citations54
US9356235B2May 31, 2016
Structure and formation method of memory device
WINBOND ELECTRONICS CORP0 citations51
US9166160B1Oct 20, 2015
Resistive random access memory and method of fabricating the same
WINBOND ELECTRONICS CORP0 citations51
US11839076B2Dec 5, 2023
Semiconductor structure and method of forming the same
WINBOND ELECTRONICS CORP0 citations50
US11638378B2Apr 25, 2023
Method of fabricating semicondoctor device
WINBOND ELECTRONICS CORP0 citations50
US10971508B2Apr 6, 2021
Integrated circuit and method of manufacturing the same
WINBOND ELECTRONICS CORP0 citations50
US10147730B2Dec 4, 2018
Memory device and method of manufacturing the same
WINBOND ELECTRONICS CORP0 citations50
US9972631B2May 15, 2018
Memory device and method of manufacturing the same
WINBOND ELECTRONICS CORP0 citations50
US7560338B2Jul 14, 2009
Manufacturing method of non-volatile memory
WINBOND ELECTRONICS CORP1 citations50
US11362098B2Jun 14, 2022
Method for manufacturing memory device
WINBOND ELECTRONICS CORP0 citations49
CHIANG LU-PING
3 patentsTAIWAN SEMICONDUCTOR MFG
2 patentsUS5913122AJun 15, 1999
Method of making high breakdown voltage twin well device with source/drain regions widely spaced from FOX regions
TAIWAN SEMICONDUCTOR MFG27 citations91
US6025628AFeb 15, 2000
High breakdown voltage twin well device with source/drain regions widely spaced from fox regions
TAIWAN SEMICONDUCTOR MFG10 citations72