Inventor
MOON BYONGMO
KR18 patents
Patents
18 patentsUS11295808B2Apr 5, 2022
Memory device transmitting and receiving data at high speed and low power
SAMSUNG ELECTRONICS CO LTD5 citations82
US11726721B2Aug 15, 2023
Memory device for adjusting delay on data clock path, memory system including the memory device, and operating method of the memory system
SAMSUNG ELECTRONICS CO LTD3 citations72
US11769547B2Sep 26, 2023
Memory device transmitting and receiving data at high speed and low power
SAMSUNG ELECTRONICS CO LTD1 citations71
US11574670B2Feb 7, 2023
Memory device for reducing resources used for training
SAMSUNG ELECTRONICS CO LTD2 citations71
US11309013B2Apr 19, 2022
Memory device for reducing resources used for training
SAMSUNG ELECTRONICS CO LTD2 citations71
US12231528B2Feb 18, 2025
Apparatus for correcting error of clock signal
SAMSUNG ELECTRONICS CO LTD3 citations68
US11356098B2Jun 7, 2022
Transmitter and receiver for low power input/output and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11189332B2Nov 30, 2021
Voltage controller and memory device including same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12367916B2Jul 22, 2025
Encoders, decoders, and semiconductor memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11488646B2Nov 1, 2022
Encoders, decoders, and semiconductor memory devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12444457B2Oct 14, 2025
Memory device transmitting and receiving data at high speed and low power
SAMSUNG ELECTRONICS CO LTD0 citations60
US9196325B2Nov 24, 2015
Integrated circuit with on die termination and reference voltage generation and methods of using the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US11309014B2Apr 19, 2022
Memory device transmitting small swing data signal and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US11238921B2Feb 1, 2022
Packaged integrated circuit memory devices having enhanced on-die-termination circuits therein and methods of operating same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12210777B2Jan 28, 2025
Memory device, operating method of the memory device, and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12548611B2Feb 10, 2026
Memory device using data strobe signal and method for compensating skew of data strobe signal thereof
SAMSUNG ELECTRONICS CO LTD0 citations48
US12381593B2Aug 5, 2025
Transmitter circuit and receiver circuit of interface circuit and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations46
US12542545B2Feb 3, 2026
High-sensitivity delay cells and circuits of detecting threshold voltage
SAMSUNG ELECTRONICS CO LTD0 citations45