Inventor
DUNN JAMES STUART
US15 patents
⚠️ This page may combine multiple inventors who share the name “DUNN JAMES STUART”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS6507063B2Jan 14, 2003
Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
IBM16 citations92
US6426265B1Jul 30, 2002
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM25 citations92
US6812545B2Nov 2, 2004
Epitaxial base bipolar transistor with raised extrinsic base
IBM28 citations90
US6597050B1Jul 22, 2003
Method of contacting a silicide-based schottky diode and diode so formed
IBM19 citations88
US6121122ASep 19, 2000
Method of contacting a silicide-based schottky diode
IBM24 citations88
US8375539B2Feb 19, 2013
Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors
IBM13 citations84
US6440811B1Aug 27, 2002
Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme
IBM15 citations83
US6617220B2Sep 9, 2003
Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base
IBM15 citations82
US6815802B2Nov 9, 2004
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM5 citations71
US7713829B2May 11, 2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM1 citations62
US6833299B2Dec 21, 2004
Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme
IBM5 citations62
US6420747B2Jul 16, 2002
MOSCAP design for improved reliability
IBM3 citations57
US5705407AJan 6, 1998
Method of forming high performance bipolar devices with improved wiring options
IBM3 citations55
US7173274B2Feb 6, 2007
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM0 citations51