Inventor
KOMORI KAZUHIRO
JP63 patents
⚠️ This page may combine multiple inventors who share the name “KOMORI KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
38 patentsUS6614684B1Sep 2, 2003
Semiconductor integrated circuit and nonvolatile memory element
HITACHI LTD353 citations99
US4651406AMar 24, 1987
Forming memory transistors with varying gate oxide thicknesses
HITACHI LTD187 citations99
US4471373ASep 11, 1984
Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS
HITACHI LTD154 citations99
US6545311B2Apr 8, 2003
Semiconductor integrated circuit and nonvolatile memory element
HITACHI LTD29 citations96
US6451643B2Sep 17, 2002
Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs
HITACHI LTD33 citations96
US5904518AMay 18, 1999
Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells
HITACHI LTD28 citations96
US5656522AAug 12, 1997
Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements
HITACHI LTD26 citations96
US5427966AJun 27, 1995
Process for fabricating a semiconductor device having floating gate and control gate electrodes
HITACHI LTD49 citations96
US5352620AOct 4, 1994
Method of making semiconductor device with memory cells and peripheral transistors
HITACHI LTD69 citations96
US5300802AApr 5, 1994
Semiconductor integrated circuit device having single-element type non-volatile memory elements
HITACHI LTD43 citations96
US5153144AOct 6, 1992
Method of making tunnel EEPROM
HITACHI LTD65 citations96
US4697198ASep 29, 1987
MOSFET which reduces the short-channel effect
HITACHI LTD64 citations96
US4663645AMay 5, 1987
Semiconductor device of an LDD structure having a floating gate
HITACHI LTD95 citations96
US4652897AMar 24, 1987
Semiconductor memory device
HITACHI LTD106 citations96
US5656839AAug 12, 1997
Semiconductor integrated circuit device having single-element type nonvolatile memory elements
HITACHI LTD20 citations93
US5235200AAug 10, 1993
Semiconductor integrated circuit device
HITACHI LTD28 citations93
US5189497AFeb 23, 1993
Semiconductor memory device
HITACHI LTD26 citations93
US5155701AOct 13, 1992
Semiconductor integrated circuit device and method of testing the same
HITACHI LTD48 citations93
US5079603AJan 7, 1992
Semiconductor memory device
HITACHI LTD53 citations93
US4373249AFeb 15, 1983
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD36 citations93
US5194924AMar 16, 1993
Semiconductor device of an LDD structure having a floating gate
HITACHI LTD31 citations92
US4996571AFeb 26, 1991
Non-volatile semiconductor memory device erasing operation
HITACHI LTD56 citations92
US4972371ANov 20, 1990
Semiconductor memory device
HITACHI LTD46 citations92
US4918501AApr 17, 1990
Semiconductor device and method of producing the same
HITACHI LTD32 citations92
US4872041AOct 3, 1989
Semiconductor device equipped with a field effect transistor having a floating gate
HITACHI LTD24 citations92
US4451904AMay 29, 1984
Semiconductor memory device
HITACHI LTD33 citations92
US5814543ASep 29, 1998
Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells
HITACHI LTD36 citations91
US5472891ADec 5, 1995
Method of manufacturing a semiconductor device
HITACHI LTD20 citations91
US6586807B2Jul 1, 2003
Semiconductor integrated circuit device
HITACHI LTD26 citations90
US6255690B1Jul 3, 2001
Non-volatile semiconductor memory device
HITACHI LTD14 citations82
US5629541AMay 13, 1997
Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data
HITACHI LTD13 citations82
US5407853AApr 18, 1995
Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements
HITACHI LTD15 citations82
US5098855AMar 24, 1992
Semiconductor device and method of producing the same
HITACHI LTD21 citations82
US4784968ANov 15, 1988
Process for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrode
HITACHI LTD20 citations82
US4818716AApr 4, 1989
Semiconductor device and manufacturing method thereof
HITACHI LTD19 citations81
US7071050B2Jul 4, 2006
Semiconductor integrated circuit device having single-element type non-volatile memory elements
HITACHI LTD3 citations74
USRE37959EJan 7, 2003
Semiconductor integrated circuit device and method of manufacturing the same
HITACHI LTD6 citations74
US5604142AFeb 18, 1997
Method of making an EPROM with peripheral transistor
HITACHI LTD11 citations74
RENESAS TECH CORP
7 patentsUS6771538B2Aug 3, 2004
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP172 citations99
US6906954B2Jun 14, 2005
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP24 citations96
US7463517B2Dec 9, 2008
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP13 citations92
US7428167B2Sep 23, 2008
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP13 citations92
US7289361B2Oct 30, 2007
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP12 citations92
US7042764B2May 9, 2006
Semiconductor integrated circuit and nonvolatile memory element
RENESAS TECH CORP11 citations92
US6960501B2Nov 1, 2005
Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets
RENESAS TECH CORP3 citations74
AGENCY IND SCIENCE TECHN
1 patent(unassigned)
1 patentKOMORI KAZUHIRO
1 patentJAPAN SCIENCE & TECH AGENCY
1 patentNAT INST OF ADVANCED IND SCIEN
1 patentShowing the top 50 of 63 patents by PatentIndex Score.