P

Inventor

KOMORI KAZUHIRO

JP63 patents
⚠️ This page may combine multiple inventors who share the name “KOMORI KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

38 patents
US6614684B1Sep 2, 2003

Semiconductor integrated circuit and nonvolatile memory element

HITACHI LTD353 citations99
US4651406AMar 24, 1987

Forming memory transistors with varying gate oxide thicknesses

HITACHI LTD187 citations99
US4471373ASep 11, 1984

Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS

HITACHI LTD154 citations99
US6545311B2Apr 8, 2003

Semiconductor integrated circuit and nonvolatile memory element

HITACHI LTD29 citations96
US6451643B2Sep 17, 2002

Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs

HITACHI LTD33 citations96
US5904518AMay 18, 1999

Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells

HITACHI LTD28 citations96
US5656522AAug 12, 1997

Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements

HITACHI LTD26 citations96
US5427966AJun 27, 1995

Process for fabricating a semiconductor device having floating gate and control gate electrodes

HITACHI LTD49 citations96
US5352620AOct 4, 1994

Method of making semiconductor device with memory cells and peripheral transistors

HITACHI LTD69 citations96
US5300802AApr 5, 1994

Semiconductor integrated circuit device having single-element type non-volatile memory elements

HITACHI LTD43 citations96
US5153144AOct 6, 1992

Method of making tunnel EEPROM

HITACHI LTD65 citations96
US4697198ASep 29, 1987

MOSFET which reduces the short-channel effect

HITACHI LTD64 citations96
US4663645AMay 5, 1987

Semiconductor device of an LDD structure having a floating gate

HITACHI LTD95 citations96
US4652897AMar 24, 1987

Semiconductor memory device

HITACHI LTD106 citations96
US5656839AAug 12, 1997

Semiconductor integrated circuit device having single-element type nonvolatile memory elements

HITACHI LTD20 citations93
US5235200AAug 10, 1993

Semiconductor integrated circuit device

HITACHI LTD28 citations93
US5189497AFeb 23, 1993

Semiconductor memory device

HITACHI LTD26 citations93
US5155701AOct 13, 1992

Semiconductor integrated circuit device and method of testing the same

HITACHI LTD48 citations93
US5079603AJan 7, 1992

Semiconductor memory device

HITACHI LTD53 citations93
US4373249AFeb 15, 1983

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD36 citations93
US5194924AMar 16, 1993

Semiconductor device of an LDD structure having a floating gate

HITACHI LTD31 citations92
US4996571AFeb 26, 1991

Non-volatile semiconductor memory device erasing operation

HITACHI LTD56 citations92
US4972371ANov 20, 1990

Semiconductor memory device

HITACHI LTD46 citations92
US4918501AApr 17, 1990

Semiconductor device and method of producing the same

HITACHI LTD32 citations92
US4872041AOct 3, 1989

Semiconductor device equipped with a field effect transistor having a floating gate

HITACHI LTD24 citations92
US4451904AMay 29, 1984

Semiconductor memory device

HITACHI LTD33 citations92
US5814543ASep 29, 1998

Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells

HITACHI LTD36 citations91
US5472891ADec 5, 1995

Method of manufacturing a semiconductor device

HITACHI LTD20 citations91
US6586807B2Jul 1, 2003

Semiconductor integrated circuit device

HITACHI LTD26 citations90
US6255690B1Jul 3, 2001

Non-volatile semiconductor memory device

HITACHI LTD14 citations82
US5629541AMay 13, 1997

Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data

HITACHI LTD13 citations82
US5407853AApr 18, 1995

Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements

HITACHI LTD15 citations82
US5098855AMar 24, 1992

Semiconductor device and method of producing the same

HITACHI LTD21 citations82
US4784968ANov 15, 1988

Process for manufacturing a semiconductor device having MIS-type field effect transistors with impurity region below the gate electrode

HITACHI LTD20 citations82
US4818716AApr 4, 1989

Semiconductor device and manufacturing method thereof

HITACHI LTD19 citations81
US7071050B2Jul 4, 2006

Semiconductor integrated circuit device having single-element type non-volatile memory elements

HITACHI LTD3 citations74
USRE37959EJan 7, 2003

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD6 citations74
US5604142AFeb 18, 1997

Method of making an EPROM with peripheral transistor

HITACHI LTD11 citations74

RENESAS TECH CORP

7 patents

AGENCY IND SCIENCE TECHN

1 patent

(unassigned)

1 patent

KOMORI KAZUHIRO

1 patent

JAPAN SCIENCE & TECH AGENCY

1 patent

NAT INST OF ADVANCED IND SCIEN

1 patent

Showing the top 50 of 63 patents by PatentIndex Score.