Inventor
JOHNSTON STEVEN W
US20 patents
⚠️ This page may combine multiple inventors who share the name “JOHNSTON STEVEN W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
12 patentsUS7694413B2Apr 13, 2010
Method of making a bottomless via
INTEL CORP18 citations92
US7279423B2Oct 9, 2007
Forming a copper diffusion barrier
INTEL CORP26 citations92
US7071126B2Jul 4, 2006
Densifying a relatively porous material
INTEL CORP36 citations92
US7459392B2Dec 2, 2008
Noble metal barrier and seed layer for semiconductors
INTEL CORP12 citations84
US7335587B2Feb 26, 2008
Post polish anneal of atomic layer deposition barrier layers
INTEL CORP13 citations84
US6867473B2Mar 15, 2005
Plating a conductive material on a dielectric material
INTEL CORP6 citations73
US6682989B1Jan 27, 2004
Plating a conductive material on a dielectric material
INTEL CORP12 citations73
US7550385B2Jun 23, 2009
Amine-free deposition of metal-nitride films
INTEL CORP6 citations62
US7435679B2Oct 14, 2008
Alloyed underlayer for microelectronic interconnects
INTEL CORP2 citations62
US7605469B2Oct 20, 2009
Atomic layer deposited tantalum containing adhesion layer
INTEL CORP0 citations45
US7601637B2Oct 13, 2009
Atomic layer deposited tantalum containing adhesion layer
INTEL CORP0 citations45
US7241706B2Jul 10, 2007
Low k ILD layer with a hydrophilic portion
INTEL CORP0 citations39
ETHYL CORP
3 patentsMIDWEST RESEARCH INST
2 patentsUS6369603B1Apr 9, 2002
Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
MIDWEST RESEARCH INST39 citations90
US6275060B1Aug 14, 2001
Apparatus and method for measuring minority carrier lifetimes in semiconductor materials
MIDWEST RESEARCH INST11 citations71