P

Inventor

KELLER DAVID J

US45 patents
⚠️ This page may combine multiple inventors who share the name “KELLER DAVID J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

31 patents
US5652170AJul 29, 1997

Method for etching sloped contact openings in polysilicon

MICRON TECHNOLOGY INC33 citations96
US5644153AJul 1, 1997

Method for etching nitride features in integrated circuit construction

MICRON TECHNOLOGY INC56 citations96
US6552394B2Apr 22, 2003

Semiconductor transistor devices and structures with halo regions

MICRON TECHNOLOGY INC15 citations93
US6165827ADec 26, 2000

Semiconductor transistor devices and methods for forming semiconductor transistor devices

MICRON TECHNOLOGY INC20 citations93
US5968844AOct 19, 1999

Method for etching nitride features in integrated circuit construction

MICRON TECHNOLOGY INC34 citations93
US5811329ASep 22, 1998

Method of forming CMOS circuitry including patterning a layer of conductive material overlying field isolation oxide

MICRON TECHNOLOGY INC20 citations93
US5651856AJul 29, 1997

Selective etch process

MICRON TECHNOLOGY INC25 citations93
US5620615AApr 15, 1997

Method of etching or removing W and WSix films

MICRON TECHNOLOGY INC32 citations93
US6432765B1Aug 13, 2002

Funnel shaped structure in polysilicon and method of making

MICRON TECHNOLOGY INC18 citations92
US6010930AJan 4, 2000

Vertically oriented structure with sloped opening and method for etching

MICRON TECHNOLOGY INC21 citations92
US6346439B1Feb 12, 2002

Semiconductor transistor devices and methods for forming semiconductor transistor devices

MICRON TECHNOLOGY INC12 citations82
US6069087AMay 30, 2000

Highly selective dry etching process

MICRON TECHNOLOGY INC17 citations82
US5923977AJul 13, 1999

Method of forming CMOS circuitry including patterning a layer of conductive material overlying field isolation oxide

MICRON TECHNOLOGY INC16 citations82
US5906950AMay 25, 1999

Selective etch process

MICRON TECHNOLOGY INC16 citations82
US6875559B2Apr 5, 2005

Method of etching materials patterned with a single layer 193nm resist

MICRON TECHNOLOGY INC6 citations74
US6333539B1Dec 25, 2001

Semiconductor transistor devices and methods for forming semiconductor transistor devices

MICRON TECHNOLOGY INC7 citations74
US6319779B1Nov 20, 2001

Semiconductor transistor devices and methods for forming semiconductor transistor devices

MICRON TECHNOLOGY INC10 citations74
US6136637AOct 24, 2000

Method of forming CMOS circuitry including patterning conductive material overlying field isolation oxide

MICRON TECHNOLOGY INC5 citations74
US5756216AMay 26, 1998

Highly selective nitride spacer etch

MICRON TECHNOLOGY INC15 citations74
US5700580ADec 23, 1997

Highly selective nitride spacer etch

MICRON TECHNOLOGY INC11 citations74
US6018173AJan 25, 2000

Vertically oriented capacitor structure with sloped contact opening and method for etching sloped contact openings in polysilicon

MICRON TECHNOLOGY INC8 citations73
US7898019B2Mar 1, 2011

Semiconductor constructions having multiple patterned masking layers over NAND gate stacks

MICRON TECHNOLOGY INC3 citations63
US7476588B2Jan 13, 2009

Methods of forming NAND cell units with string gates of various widths

MICRON TECHNOLOGY INC3 citations63
US7410748B2Aug 12, 2008

Method of etching materials patterned with a single layer 193nm resist

MICRON TECHNOLOGY INC2 citations63
US7341951B2Mar 11, 2008

Methods of forming semiconductor constructions

MICRON TECHNOLOGY INC2 citations63
US6722376B2Apr 20, 2004

Polysilicon etch useful during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC2 citations63
US8367303B2Feb 5, 2013

Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control

MICRON TECHNOLOGY INC2 citations62
US6545308B2Apr 8, 2003

Funnel shaped structure in polysilicon

MICRON TECHNOLOGY INC3 citations62
US8043911B2Oct 25, 2011

Methods of forming semiconductor constructions

MICRON TECHNOLOGY INC0 citations52
US7163017B2Jan 16, 2007

Polysilicon etch useful during the manufacture of a semiconductor device

MICRON TECHNOLOGY INC0 citations52
US9082721B2Jul 14, 2015

Structures comprising masks comprising carbon

MICRON TECHNOLOGY INC1 citations51

BORDEN INC

8 patents

MICRON SEMICONDUCTOR INC

5 patents

KELLER DAVID J

1 patent