Inventor
HIRANO YUUICHI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “HIRANO YUUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
25 patentsUS7541644B2Jun 2, 2009
Semiconductor device with effective heat-radiation
RENESAS TECH CORP71 citations98
US7067881B2Jun 27, 2006
Semiconductor device
RENESAS TECH CORP29 citations93
US6975041B2Dec 13, 2005
Semiconductor storage device having high soft-error immunity
RENESAS TECH CORP28 citations93
US6933565B2Aug 23, 2005
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP39 citations93
US6756692B2Jun 29, 2004
Semiconductor storage device having high soft-error immunity
RENESAS TECH CORP17 citations93
US6872979B2Mar 29, 2005
Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layers
RENESAS TECH CORP13 citations92
US6841400B2Jan 11, 2005
Method of manufacturing semiconductor device having trench isolation
RENESAS TECH CORP13 citations84
US7741679B2Jun 22, 2010
Semiconductor device, method of manufacturing same and method of designing same
RENESAS TECH CORP4 citations74
US7271454B2Sep 18, 2007
Semiconductor memory device and method of manufacturing the same
RENESAS TECH CORP7 citations74
US7193272B2Mar 20, 2007
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP4 citations74
US7144764B2Dec 5, 2006
Method of manufacturing semiconductor device having trench isolation
RENESAS TECH CORP7 citations74
US6858918B2Feb 22, 2005
Semiconductor device including a capacitance
RENESAS TECH CORP5 citations74
US7045867B2May 16, 2006
Semiconductor device of reduced gate overlap capacitance and method of manufacturing the semiconductor device
RENESAS TECH CORP8 citations72
US7675122B2Mar 9, 2010
Semiconductor memory device
RENESAS TECH CORP2 citations63
US7608879B2Oct 27, 2009
Semiconductor device including a capacitance
RENESAS TECH CORP1 citations63
US7598570B2Oct 6, 2009
Semiconductor device, SRAM and manufacturing method of semiconductor device
RENESAS TECH CORP2 citations63
US7382026B2Jun 3, 2008
Semiconductor memory device and method of manufacturing the same
RENESAS TECH CORP2 citations63
US7332776B2Feb 19, 2008
Semiconductor device
RENESAS TECH CORP3 citations63
US7307318B2Dec 11, 2007
Semiconductor device
RENESAS TECH CORP5 citations63
US6787855B2Sep 7, 2004
Semiconductor device and method of manufacturing same
RENESAS TECH CORP2 citations63
US7723790B2May 25, 2010
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP0 citations52
US7482658B2Jan 27, 2009
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP0 citations52
US7439587B2Oct 21, 2008
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP0 citations52
US7393731B2Jul 1, 2008
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP1 citations52
US7339238B2Mar 4, 2008
Semiconductor device including a capacitance
RENESAS TECH CORP0 citations52
MITSUBISHI ELECTRIC CORP
23 patentsUS6452249B1Sep 17, 2002
Inductor with patterned ground shield
MITSUBISHI ELECTRIC CORP89 citations98
US5892382AApr 6, 1999
Current mode logic circuit, source follower circuit and flip flop circuit
MITSUBISHI ELECTRIC CORP116 citations98
US6611041B2Aug 26, 2003
Inductor with patterned ground shield
MITSUBISHI ELECTRIC CORP59 citations96
US6455894B1Sep 24, 2002
Semiconductor device, method of manufacturing the same and method of arranging dummy region
MITSUBISHI ELECTRIC CORP72 citations96
US6340829B1Jan 22, 2002
Semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP64 citations96
US6304110B1Oct 16, 2001
Buffer using dynamic threshold-voltage MOS transistor
MITSUBISHI ELECTRIC CORP71 citations96
US6104214AAug 15, 2000
Current mode logic circuit, source follower circuit, and flip flop circuit
MITSUBISHI ELECTRIC CORP52 citations96
US6953979B1Oct 11, 2005
Semiconductor device, method of manufacturing same and method of designing same
MITSUBISHI ELECTRIC CORP20 citations93
US6429079B1Aug 6, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP29 citations93
US6337230B2Jan 8, 2002
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP17 citations93
US6252280B1Jun 26, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP23 citations93
US6225665B1May 1, 2001
Semiconductor device having multiple source regions
MITSUBISHI ELECTRIC CORP21 citations93
US6204536B1Mar 20, 2001
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP31 citations93
US6232201B1May 15, 2001
Semiconductor substrate processing method
MITSUBISHI ELECTRIC CORP24 citations92
US7303950B2Dec 4, 2007
Semiconductor device, method of manufacturing same and method of designing same
MITSUBISHI ELECTRIC CORP4 citations74
US6958266B2Oct 25, 2005
Semiconductor device, method of manufacturing same and method of designing same
MITSUBISHI ELECTRIC CORP10 citations74
US6657312B2Dec 2, 2003
Semiconductor device in which bump used for fixing potential of silicon substrate can be easily formed
MITSUBISHI ELECTRIC CORP9 citations74
US6459125B2Oct 1, 2002
SOI based transistor inside an insulation layer with conductive bump on the insulation layer
MITSUBISHI ELECTRIC CORP12 citations74
US6291857B1Sep 18, 2001
Semiconductor device of SOI structure with floating body region
MITSUBISHI ELECTRIC CORP13 citations74
US6563172B2May 13, 2003
Semiconductor substrate processing method
MITSUBISHI ELECTRIC CORP12 citations73
US6436792B1Aug 20, 2002
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP2 citations63
US6414354B1Jul 2, 2002
Semiconductor device having a semiconductor layer with a channel region having a continuously increasing impurity concentration profile
MITSUBISHI ELECTRIC CORP3 citations63
US6383850B2May 7, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP4 citations63
RENESAS ELECTRONICS CORP
1 patentFUJITSU LTD
1 patentShowing the top 50 of 54 patents by PatentIndex Score.