P

Inventor

MORITOKI MASASHIGE

JP12 patents
⚠️ This page may combine multiple inventors who share the name “MORITOKI MASASHIGE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RENESAS ELECTRONICS CORP

6 patents
US9660079B2May 23, 2017

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP2 citations72
US9478547B2Oct 25, 2016

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP3 citations71
US9064889B2Jun 23, 2015

Semiconductor device with epitaxial semiconductor layer for source/drain on substrate, and method of manufacturing the same

RENESAS ELECTRONICS CORP2 citations62
US9293562B2Mar 22, 2016

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP0 citations51
US7947568B2May 24, 2011

Method of manufacturing semiconductor device

RENESAS ELECTRONICS CORP1 citations51
US7879680B2Feb 1, 2011

Method of fabricating semiconductor device

RENESAS ELECTRONICS CORP1 citations51

MORITOKI MASASHIGE

2 patents
US8455925B2Jun 4, 2013

Semiconductor device and method for manufacturing the same

MORITOKI MASASHIGE3 citations54
US8143152B2Mar 27, 2012

Manufacturing method of semiconductor device having self-aligned contact connected to silicide layer on substrate surface

MORITOKI MASASHIGE0 citations36

NEC ELECTRONICS CORP

2 patents
US7786005B2Aug 31, 2010

Method for manufacturing semiconductor device to form a via hole

NEC ELECTRONICS CORP1 citations45
US7646096B2Jan 12, 2010

Semiconductor device and manufacturing method thereof

NEC ELECTRONICS CORP0 citations36

NEC CORP

1 patent
US5759751AJun 2, 1998

Method of peeling photo-resist layer without damage to metal wiring

NEC CORP13 citations68

SONY SEMICONDUCTOR SOLUTIONS CORP

1 patent
US12339334B2Jun 24, 2025

Magnetoresistive element and semiconductor device

SONY SEMICONDUCTOR SOLUTIONS CORP1 citations62