Inventor
CHUNG SU-OCK
KR17 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG SU-OCK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
10 patentsUS11501827B2Nov 15, 2022
Vertical memory device with a double word line structure
SK HYNIX INC5 citations83
US9184378B2Nov 10, 2015
Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
SK HYNIX INC5 citations83
US11887654B2Jan 30, 2024
Vertical memory device
SK HYNIX INC1 citations72
US11355177B2Jun 7, 2022
Vertical memory device
SK HYNIX INC2 citations72
US12230313B2Feb 18, 2025
Vertical memory device
SK HYNIX INC0 citations62
US12131950B2Oct 29, 2024
Method for fabricating a semiconductor device
SK HYNIX INC0 citations62
US12131774B2Oct 29, 2024
Vertical memory device with a double word line structure
SK HYNIX INC0 citations62
US11895828B2Feb 6, 2024
Semiconductor memory device
SK HYNIX INC0 citations62
US9293705B2Mar 22, 2016
Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
SK HYNIX INC0 citations51
US11832434B2Nov 28, 2023
Memory cell and memory device
SK HYNIX INC0 citations48
HYNIX SEMICONDUCTOR INC
6 patentsUS7911030B2Mar 22, 2011
Resistive memory device and method of fabricating the same
HYNIX SEMICONDUCTOR INC15 citations83
US6699746B2Mar 2, 2004
Method for manufacturing semiconductor device
HYNIX SEMICONDUCTOR INC16 citations83
US7662691B2Feb 16, 2010
Method for fabricating semiconductor device with epitaxial growth
HYNIX SEMICONDUCTOR INC7 citations72
US7087533B2Aug 8, 2006
Method for fabricating semiconductor device
HYNIX SEMICONDUCTOR INC7 citations72
US7947541B2May 24, 2011
Method of fabricating a semiconductor device
HYNIX SEMICONDUCTOR INC0 citations51
US7705419B2Apr 27, 2010
Fuse box of semiconductor device formed using conductive oxide layer and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations40