Inventor

IVANTSOV VLADIMIR

US20 patents

⚠️ This page may combine multiple inventors who share the name “IVANTSOV VLADIMIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IVANTSOV VLADIMIR

TECHNOLOGIES AND DEVICES INTER

Bulk GaN and ALGaN single crystals

Method for fabricating bulk GaN single crystals

Reactor for extended duration growth of gallium containing single crystals

Reactor for extended duration growth of gallium containing single crystals

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk AlGaN single crystals

HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby

Reactor for extended duration growth of gallium containing single crystals

OSTENDO TECHNOLOGIES INC

Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner

Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions

HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby

Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

Semi-polar III-nitride films and materials and method for making the same

FREIBERGER COMPOUND MAT GMBH

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

DMITRIEV VLADIMIR A

HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

Apparatus and methods for controlling gas flows in a HVPE reactor

USIKOV ALEXANDER

Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)

IVANTSOV VLADIMIR

Method for substrate pretreatment to achieve high-quality III-nitride epitaxy

MELNIK YURI V

Bulk GaN and AlGaN single crystals