Inventor

USIKOV ALEXANDER

US8 patents

⚠️ This page may combine multiple inventors who share the name “USIKOV ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OSTENDO TECHNOLOGIES INC

2 patents

US9023673B1May 5, 2015

Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions

OSTENDO TECHNOLOGIES INC8 citations82

US11661673B1May 30, 2023

HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby

OSTENDO TECHNOLOGIES INC1 citations61

DMITRIEV VLADIMIR A

2 patents

US8647435B1Feb 11, 2014

HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

DMITRIEV VLADIMIR A11 citations79

US9416464B1Aug 16, 2016

Apparatus and methods for controlling gas flows in a HVPE reactor

DMITRIEV VLADIMIR A4 citations68

TECHNOLOGIES AND DEVICES INTER

1 patent

US7727333B1Jun 1, 2010

HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby

TECHNOLOGIES AND DEVICES INTER21 citations90

TECHNOLOGIES AND DEVILES INTER

1 patent

US6890809B2May 10, 2005

Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device

TECHNOLOGIES AND DEVILES INTER34 citations86

USIKOV ALEXANDER

1 patent

US8673074B2Mar 18, 2014

Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)

USIKOV ALEXANDER4 citations64

SPIBERG PHILIPPE

1 patent

US8629065B2Jan 14, 2014

Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)

SPIBERG PHILIPPE4 citations62