Inventor
OH TAEYOUNG
KR37 patents
⚠️ This page may combine multiple inventors who share the name “OH TAEYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
34 patentsUS10255964B2Apr 9, 2019
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD22 citations93
US10867657B2Dec 15, 2020
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD4 citations83
US10242719B2Mar 26, 2019
Power management of a memory device by dynamically changing supply voltage
SAMSUNG ELECTRONICS CO LTD10 citations83
US10090039B2Oct 2, 2018
Semiconductor memory device that includes a refresh control circuit that maintains a refresh cycle when an MRS code signal is changed due to temperature
SAMSUNG ELECTRONICS CO LTD6 citations79
US9767883B2Sep 19, 2017
Semiconductor memory device that performs a refresh operation
SAMSUNG ELECTRONICS CO LTD9 citations79
US11621034B2Apr 4, 2023
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD1 citations72
US11087822B2Aug 10, 2021
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD3 citations72
US10699770B2Jun 30, 2020
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD1 citations72
US10460793B2Oct 29, 2019
Semiconductor memory device having clock generation scheme based on command
SAMSUNG ELECTRONICS CO LTD1 citations72
US12535960B2Jan 27, 2026
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12456508B2Oct 28, 2025
Memory device, operation method of a memory device, and operation method of a memory controller
SAMSUNG ELECTRONICS CO LTD0 citations62
US12340088B2Jun 24, 2025
Memory device, memory control device and operating method of memory device for checking command and address (CA) signal with predetermined pattern of command
SAMSUNG ELECTRONICS CO LTD0 citations62
US12142314B2Nov 12, 2024
Semiconductor die for controlling on-die-termination of another semiconductor die, and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12118221B2Oct 15, 2024
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US10726882B2Jul 28, 2020
Power management of a memory device by dynamically changing supply voltage
SAMSUNG ELECTRONICS CO LTD1 citations62
US10665558B2May 26, 2020
Semiconductor memory including pads arranged in parallel
SAMSUNG ELECTRONICS CO LTD1 citations62
US12542166B2Feb 3, 2026
Memory device and method for synchronizing command start point (CSP)
SAMSUNG ELECTRONICS CO LTD0 citations61
US12535956B2Jan 27, 2026
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12175099B2Dec 24, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12308089B2May 20, 2025
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations59
US12073910B2Aug 27, 2024
Semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations59
US12572456B2Mar 10, 2026
Memory module including memory devices to which unit ID is assigned and storage device including the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US12474871B2Nov 18, 2025
Memory module for performing one-time programmable (OTP) addressing operation to store unique ID of each memory device in an ID storge region of each memory device, and storage device including the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US12531106B2Jan 20, 2026
Memory module adjusting inter-rank clock timing, memory system and training method thereof
SAMSUNG ELECTRONICS CO LTD0 citations56
US12451174B2Oct 21, 2025
Semiconductor devices capable of performing write training without read training, and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12373106B2Jul 29, 2025
Memory system for controlling heterogeneous clock signal delay modes, method of operating the memory system, and memory controller
SAMSUNG ELECTRONICS CO LTD0 citations52
US12080334B2Sep 3, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12456509B2Oct 28, 2025
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12450004B2Oct 21, 2025
Semiconductor memory device and method for storing meta data in sub-array blocks of memory cell array
SAMSUNG ELECTRONICS CO LTD0 citations51
US12346573B2Jul 1, 2025
Semiconductor memory device and methods of operation
SAMSUNG ELECTRONICS CO LTD0 citations51
US12236997B2Feb 25, 2025
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12400729B2Aug 26, 2025
Semiconductor memory device and method of operating semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12531111B2Jan 20, 2026
Semiconductor package including memory die stack having clock signal shared by lower and upper bytes
SAMSUNG ELECTRONICS CO LTD0 citations45
US12333169B2Jun 17, 2025
Memory system for optimizing on-die termination settings of multi-ranks, method of operation of memory system, and memory controller
SAMSUNG ELECTRONICS CO LTD0 citations45