Inventor
PARK SEONGGEON
KR8 patents
Patents
8 patentsUS12245518B2Mar 4, 2025
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12150387B2Nov 19, 2024
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12052930B2Jul 30, 2024
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US12382839B2Aug 5, 2025
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12310250B2May 20, 2025
Magnetic tunneling junction device and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12481435B2Nov 25, 2025
Field programmable gate array device including spin orbit torque-magnetic random access memory and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations50
US9378811B2Jun 28, 2016
Methods of operating variable resistance memory devices
SAMSUNG ELECTRONICS CO LTD0 citations49
US12563741B2Feb 24, 2026
Magnetoresistive random access memory devices having efficient unit cell layouts
SAMSUNG ELECTRONICS CO LTD0 citations45