Inventor
UM KEE JU
KR20 patents
⚠️ This page may combine multiple inventors who share the name “UM KEE JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRO MECH
18 patentsUSD717254SNov 11, 2014
Semiconductor device
SAMSUNG ELECTRO MECH50 citations95
USD719926SDec 23, 2014
Semiconductor device
SAMSUNG ELECTRO MECH33 citations94
USD719113SDec 9, 2014
Semiconductor device
SAMSUNG ELECTRO MECH43 citations94
USD717255SNov 11, 2014
Semiconductor device
SAMSUNG ELECTRO MECH45 citations93
US9019735B2Apr 28, 2015
Power factor correction circuit and method for controlling power factor correction
SAMSUNG ELECTRO MECH6 citations73
US9627470B2Apr 18, 2017
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH2 citations72
US11166365B2Nov 2, 2021
Printed circuit board and manufacturing method for the same
SAMSUNG ELECTRO MECH0 citations55
US9356116B2May 31, 2016
Power semiconductor device and method of fabricating the same
SAMSUNG ELECTRO MECH0 citations52
US9466589B2Oct 11, 2016
Power module package including heat spreader and inductance coil
SAMSUNG ELECTRO MECH0 citations51
US9318423B2Apr 19, 2016
Leadless package type power semiconductor module
SAMSUNG ELECTRO MECH0 citations51
US9287363B2Mar 15, 2016
Semiconductor device, method of manufacturing the same and power semiconductor device including the same
SAMSUNG ELECTRO MECH0 citations51
US9147757B2Sep 29, 2015
Power semiconductor device and method for manufacturing the same
SAMSUNG ELECTRO MECH0 citations51
US8981423B2Mar 17, 2015
Power semiconductor device and method of fabricating the same
SAMSUNG ELECTRO MECH1 citations51
US9318599B2Apr 19, 2016
Power semiconductor device
SAMSUNG ELECTRO MECH1 citations49
US9281389B2Mar 8, 2016
Semiconductor device
SAMSUNG ELECTRO MECH0 citations41
US9318589B2Apr 19, 2016
Insulated gate bipolar transistor
SAMSUNG ELECTRO MECH0 citations40
US9184247B2Nov 10, 2015
Power semiconductor device capable of maintaining a withstand voltage
SAMSUNG ELECTRO MECH0 citations40
US9153678B2Oct 6, 2015
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRO MECH0 citations40