Inventor

CHUANG HARRY-HAK-LAY

TW399 patents

⚠️ This page may combine multiple inventors who share the name “CHUANG HARRY-HAK-LAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUANG HARRY-HAK-LAY

TAIWAN SEMICONDUCTOR MFG CO LTD

Techniques for MRAM MTJ top electrode connection

Dummy bottom electrode in interconnect to reduce CMP dishing

Techniques for MRAM MTJ top electrode to metal layer interface including spacer

Semiconductor structure having magnetic tunneling junction (MTJ) layer

Memory cell with top electrode via

MRAM device and method for fabricating the same

Embedded memory device between noncontigous interconnect metal layers

Si recess method in HKMG replacement gate technology

Method for manufacturing mixed-dimension and void-free MRAM structure

HKMG high voltage CMOS for embedded non-volatile memory

Semiconductor structure and method of forming the same

Semiconductor memory device and method for fabricating the same

Magnetic random access memory structure and manufacturing method of the same

Techniques for MRAM MTJ top electrode to metal layer interface including spacer

Techniques for MRAM top electrode via connection

Techniques for MRAM MTJ top electrode connection

Semiconductor structure and manufacturing method of the same

Manufacturing techniques and corresponding devices for magnetic tunnel junction devices

Magnetic random access memory structure and manufacturing method of the same

Memory device having a single bottom electrode layer

Determining a characteristic of a monitored layer on an integrated chip

Dummy bottom electrode in interconnect to reduce CMP dishing

Contact for high-k metal gate device

Semiconductor structure and method of forming the same

Si recess method in HKMG replacement gate technology

Semiconductor structure and method of forming the same

Semiconductor structure and method for manufacturing the same

Manufacturing techniques and corresponding devices for magnetic tunnel junction devices

HK embodied flash memory and methods of forming the same

Vertical tunneling field-effect transistor cell and fabricating the same

Metal gate structure of a CMOS semiconductor device

CMP fabrication solution for split gate memory embedded in HK-MG process

Semiconductor device and fabricating method thereof

TAIWAN SEMICONDUCTOR MFG

Vertical tunneling field-effect transistor cell and fabricating the same

Spacer structures of a semiconductor device

Method for main spacer trim-back

Contact for high-k metal gate device

Embedded flash memory device with floating gate embedded in a substrate

Metal gate semiconductor device

Vertical tunneling field-effect transistor cell and fabricating the same

HK embodied flash memory and methods of forming the same

Structure and method for vertical tunneling field effect transistor with leveled source and drain

Semiconductor device and method of forming the same

Structure and method for static random access memory device of vertical tunneling field effect transistor

CHUANG HARRY HAK-LAY

Polysilicon design for replacement gate technology

Metal gate structure of a CMOS semiconductor device

NG JIN-AUN

Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers

TEO LEE-WEE

Spacer structures of a semiconductor device

CHANG HONG-DYI

Method for protecting a gate structure during contact formation

CHUANG HARRY-HAK-LAY

Metal gate features of semiconductor die