P

Inventor

HUANG CHUNG-JEN

TW44 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHUNG-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US10504912B2Dec 10, 2019

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10128259B1Nov 13, 2018

Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technology

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12094984B2Sep 17, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11349035B2May 31, 2022

Semiconductor device including non-volatile memory cells

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10693018B2Jun 23, 2020

Method of manufacturing a semiconductor device including non-volatile memory cells

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276728B2Apr 30, 2019

Semiconductor device including non-volatile memory cells

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269909B1Apr 23, 2019

Memory device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10170488B1Jan 1, 2019

Non-volatile memory of semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11532637B2Dec 20, 2022

Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020

Integrated chip having a logic gate electrode and a tunnel dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9799755B2Oct 24, 2017

Method for manufacturing memory device and method for manufacturing shallow trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12469817B2Nov 11, 2025

Support structure to reinforce stacked semiconductor wafers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165955B2Dec 10, 2024

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144173B2Nov 12, 2024

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107001B2Oct 1, 2024

Semiconductor feature and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854942B2Dec 26, 2023

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11764103B2Sep 19, 2023

Semiconductor feature and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11711917B2Jul 25, 2023

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342025B2May 24, 2022

Non-volatile memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189546B2Nov 30, 2021

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158647B2Oct 26, 2021

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121047B2Sep 14, 2021

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114452B2Sep 7, 2021

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024637B2Jun 1, 2021

Embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937795B2Mar 2, 2021

Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10510765B2Dec 17, 2019

Memory device and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10290722B2May 14, 2019

Memory device and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12114503B2Oct 8, 2024

Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191282B2Jan 7, 2025

Shared pad/bridge layout for a 3D IC

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10204917B2Feb 12, 2019

Method for manufacturing embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12482698B2Nov 25, 2025

Testing structure for an integrated chip having a high-voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720214B2Jul 21, 2020

Non-volatile memory device and method for controlling the non-volatile memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10505015B2Dec 10, 2019

Memory device and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269822B2Apr 23, 2019

Method to fabricate uniform tunneling dielectric of embedded flash memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10665726B2May 26, 2020

Memory device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10504913B2Dec 10, 2019

Method for manufacturing embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US9997527B1Jun 12, 2018

Method for manufacturing embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US10879181B2Dec 29, 2020

Embedded non-volatile memory with side word line

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations36

MOUNTAIN PNEUMATIC TOOLS CO LT

2 patents

SUNONWEALTH ELECTR MACH IND CO

1 patent

HUANG CHUNG-JEN

1 patent

SUNOWEALTH ELECTRIC MACHINE IN

1 patent

TEKNOWLEDGE DEV CORP

1 patent