Inventor
HUANG CHUNG-JEN
TW44 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHUNG-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS10504912B2Dec 10, 2019
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10128259B1Nov 13, 2018
Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technology
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12094984B2Sep 17, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11349035B2May 31, 2022
Semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10693018B2Jun 23, 2020
Method of manufacturing a semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276728B2Apr 30, 2019
Semiconductor device including non-volatile memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269909B1Apr 23, 2019
Memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10170488B1Jan 1, 2019
Non-volatile memory of semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11532637B2Dec 20, 2022
Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020
Integrated chip having a logic gate electrode and a tunnel dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9799755B2Oct 24, 2017
Method for manufacturing memory device and method for manufacturing shallow trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12469817B2Nov 11, 2025
Support structure to reinforce stacked semiconductor wafers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165955B2Dec 10, 2024
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144173B2Nov 12, 2024
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107001B2Oct 1, 2024
Semiconductor feature and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854942B2Dec 26, 2023
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11764103B2Sep 19, 2023
Semiconductor feature and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11711917B2Jul 25, 2023
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342025B2May 24, 2022
Non-volatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189546B2Nov 30, 2021
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158647B2Oct 26, 2021
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121047B2Sep 14, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114452B2Sep 7, 2021
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024637B2Jun 1, 2021
Embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937795B2Mar 2, 2021
Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10510765B2Dec 17, 2019
Memory device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10290722B2May 14, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12114503B2Oct 8, 2024
Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12191282B2Jan 7, 2025
Shared pad/bridge layout for a 3D IC
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10204917B2Feb 12, 2019
Method for manufacturing embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12482698B2Nov 25, 2025
Testing structure for an integrated chip having a high-voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720214B2Jul 21, 2020
Non-volatile memory device and method for controlling the non-volatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10505015B2Dec 10, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269822B2Apr 23, 2019
Method to fabricate uniform tunneling dielectric of embedded flash memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10665726B2May 26, 2020
Memory device and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US10504913B2Dec 10, 2019
Method for manufacturing embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US9997527B1Jun 12, 2018
Method for manufacturing embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US10879181B2Dec 29, 2020
Embedded non-volatile memory with side word line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations36