Inventor
CHUNG CHEN-HUI
TW22 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG CHEN-HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
20 patentsUS5585297ADec 17, 1996
Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby
UNITED MICROELECTRONICS CORP23 citations92
US5545580AAug 13, 1996
Multi-state read-only memory using multiple polysilicon selective depositions
UNITED MICROELECTRONICS CORP20 citations92
US5504030AApr 2, 1996
Process for fabricating high-density mask ROM devices
UNITED MICROELECTRONICS CORP21 citations92
US5429975AJul 4, 1995
Method of implanting during manufacture of ROM device
UNITED MICROELECTRONICS CORP25 citations92
US5382534AJan 17, 1995
Field effect transistor with recessed buried source and drain regions
UNITED MICROELECTRONICS CORP28 citations92
US5668030ASep 16, 1997
Process for making identification alphanumeric code markings for mask ROM devices
UNITED MICROELECTRONICS CORP8 citations74
US5597753AJan 28, 1997
CVD oxide coding method for ultra-high density mask read-only-memory (ROM)
UNITED MICROELECTRONICS CORP17 citations74
US5536669AJul 16, 1996
Method for fabricating read-only-memory devices with self-aligned code implants
UNITED MICROELECTRONICS CORP12 citations74
US5665995ASep 9, 1997
Post passivation programmed mask ROM
UNITED MICROELECTRONICS CORP13 citations72
US5429974AJul 4, 1995
Post passivation mask ROM programming method
UNITED MICROELECTRONICS CORP15 citations72
US5488009AJan 30, 1996
Post-titanium nitride mask ROM programming method
UNITED MICROELECTRONICS CORP6 citations71
US5705840AJan 6, 1998
Field effect transistor with recessed buried source and drain regions
UNITED MICROELECTRONICS CORP15 citations69
US5693551ADec 2, 1997
Method for fabricating a tri-state read-only memory device
UNITED MICROELECTRONICS CORP4 citations63
US5654576AAug 5, 1997
Post-titanium nitride mask ROM programming method and device manufactured thereby
UNITED MICROELECTRONICS CORP4 citations63
US5567970AOct 22, 1996
Post metal mask ROM with thin glass dielectric layer formed over word lines
UNITED MICROELECTRONICS CORP5 citations63
US6184118B1Feb 6, 2001
Method for preventing the peeling of the tungsten metal after the metal-etching process
UNITED MICROELECTRONICS CORP5 citations62
US5859460AJan 12, 1999
Tri-state read-only memory device and method for fabricating the same
UNITED MICROELECTRONICS CORP1 citations52
US5756376AMay 26, 1998
Method for removing a diffusion barrier layer on pad regions
UNITED MICROELECTRONICS CORP1 citations52
US5646436AJul 8, 1997
Read only memory (ROM) device produced by self-aligned implantation
UNITED MICROELECTRONICS CORP1 citations52
US5576235ANov 19, 1996
ROM coding process with self-aligned implantation and the ROM produced thereby
UNITED MICROELECTRONICS CORP1 citations52