P

Inventor

CHUNG CHEN-HUI

TW22 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG CHEN-HUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

20 patents
US5585297ADec 17, 1996

Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby

UNITED MICROELECTRONICS CORP23 citations92
US5545580AAug 13, 1996

Multi-state read-only memory using multiple polysilicon selective depositions

UNITED MICROELECTRONICS CORP20 citations92
US5504030AApr 2, 1996

Process for fabricating high-density mask ROM devices

UNITED MICROELECTRONICS CORP21 citations92
US5429975AJul 4, 1995

Method of implanting during manufacture of ROM device

UNITED MICROELECTRONICS CORP25 citations92
US5382534AJan 17, 1995

Field effect transistor with recessed buried source and drain regions

UNITED MICROELECTRONICS CORP28 citations92
US5668030ASep 16, 1997

Process for making identification alphanumeric code markings for mask ROM devices

UNITED MICROELECTRONICS CORP8 citations74
US5597753AJan 28, 1997

CVD oxide coding method for ultra-high density mask read-only-memory (ROM)

UNITED MICROELECTRONICS CORP17 citations74
US5536669AJul 16, 1996

Method for fabricating read-only-memory devices with self-aligned code implants

UNITED MICROELECTRONICS CORP12 citations74
US5665995ASep 9, 1997

Post passivation programmed mask ROM

UNITED MICROELECTRONICS CORP13 citations72
US5429974AJul 4, 1995

Post passivation mask ROM programming method

UNITED MICROELECTRONICS CORP15 citations72
US5488009AJan 30, 1996

Post-titanium nitride mask ROM programming method

UNITED MICROELECTRONICS CORP6 citations71
US5705840AJan 6, 1998

Field effect transistor with recessed buried source and drain regions

UNITED MICROELECTRONICS CORP15 citations69
US5693551ADec 2, 1997

Method for fabricating a tri-state read-only memory device

UNITED MICROELECTRONICS CORP4 citations63
US5654576AAug 5, 1997

Post-titanium nitride mask ROM programming method and device manufactured thereby

UNITED MICROELECTRONICS CORP4 citations63
US5567970AOct 22, 1996

Post metal mask ROM with thin glass dielectric layer formed over word lines

UNITED MICROELECTRONICS CORP5 citations63
US6184118B1Feb 6, 2001

Method for preventing the peeling of the tungsten metal after the metal-etching process

UNITED MICROELECTRONICS CORP5 citations62
US5859460AJan 12, 1999

Tri-state read-only memory device and method for fabricating the same

UNITED MICROELECTRONICS CORP1 citations52
US5756376AMay 26, 1998

Method for removing a diffusion barrier layer on pad regions

UNITED MICROELECTRONICS CORP1 citations52
US5646436AJul 8, 1997

Read only memory (ROM) device produced by self-aligned implantation

UNITED MICROELECTRONICS CORP1 citations52
US5576235ANov 19, 1996

ROM coding process with self-aligned implantation and the ROM produced thereby

UNITED MICROELECTRONICS CORP1 citations52

CHUNG CHEN HUI

1 patent

INVENTEC PUDONG TECH CORP

1 patent