P

Inventor

CHENG YAO-YI

TW11 patents

Patents

11 patents
US6331480B1Dec 18, 2001

Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material

TAIWAN SEMICONDUCTOR MFG95 citations98
US6159842ADec 12, 2000

Method for fabricating a hybrid low-dielectric-constant intermetal dielectric (IMD) layer with improved reliability for multilevel interconnections

TAIWAN SEMICONDUCTOR MFG97 citations97
US6187663B1Feb 13, 2001

Method of optimizing device performance via use of copper damascene structures, and HSQ/FSG, hybrid low dielectric constant materials

TAIWAN SEMICONDUCTOR MFG59 citations96
US6143670ANov 7, 2000

Method to improve adhesion between low dielectric constant layer and silicon containing dielectric layer

TAIWAN SEMICONDUCTOR MFG61 citations96
US6472335B1Oct 29, 2002

Methods of adhesion promoter between low-K layer and underlying insulating layer

TAIWAN SEMICONDUCTOR MFG28 citations92
US5795833AAug 18, 1998

Method for fabricating passivation layers over metal lines

TAIWAN SEMICONDUCTOR MFG43 citations92
US6242338B1Jun 5, 2001

Method of passivating a metal line prior to deposition of a fluorinated silica glass layer

TAIWAN SEMICONDUCTOR MFG18 citations84
US6255232B1Jul 3, 2001

Method for forming low dielectric constant spin-on-polymer (SOP) dielectric layer

TAIWAN SEMICONDUCTOR MFG12 citations74
US6020273AFeb 1, 2000

Method of stabilizing low dielectric constant films

TAIWAN SEMICONDUCTOR MFG9 citations71
US6706637B2Mar 16, 2004

Dual damascene aperture formation method absent intermediate etch stop layer

TAIWAN SEMICONDUCTOR MFG6 citations60
US6667249B1Dec 23, 2003

Minimizing coating defects in low dielectric constant films

TAIWAN SEMICONDUCTOR MFG0 citations51