Inventor

PHILIPPOU ALEXANDER

DE33 patents

⚠️ This page may combine multiple inventors who share the name “PHILIPPOU ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PHILIPPOU ALEXANDER

INFINEON TECHNOLOGIES AG

Method for producing IGBT with dV/dt controllability

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Method for producing IGBT with dV/dt controllability

Semiconductor device with variable resistive element

Semiconductor device and insulated gate bipolar transistor with barrier structure

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Power semiconductor device with dV/dt controllability and low gate charge

Power semiconductor device having a barrier region

Power semiconductor switch having a cross-trench structure

IGBT with dV/dt controllability

Power semiconductor device having a cross-trench arrangement

IGBT having a barrier region

IGBT with dV/dt controllability

Power semiconductor device with dV/dt controllability and low gate charge

Power semiconductor device with dV/dt controllability and low gate charge

Method of processing a power semiconductor device

Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same

Diode with structured barrier region

RC IGBT with an IGBT section and a diode section

Power semiconductor device having an SOI island

IGBT with dV/dt controllability

SOI island in a power semiconductor device

Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures

Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same

Method for determining an edge profile of a volume of a photoresist after a development process

Semiconductor die, semiconductor device and IGBT module

Power semiconductor device including first and second trench structures

Trench transistor device

Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device

Semiconductor device comprising transistor cell units with different threshold voltages

Semiconductor device with sensor potential in the active region

INFINEON TECHNOLOGIES AUSTRIA AG

Power transistor with dV/dt controllability and tapered mesas

WERBER DOROTHEA

Reverse conducting insulated gate bipolar transistor