Inventor

BABURSKE ROMAN

DE71 patents

⚠️ This page may combine multiple inventors who share the name “BABURSKE ROMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BABURSKE ROMAN

INFINEON TECHNOLOGIES AG

Semiconductor device with control structure including buried portions and method of manufacturing

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Method for forming a semiconductor device

Semiconductor device and insulated gate bipolar transistor with barrier regions

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

N-channel bipolar power semiconductor device with p-layer in the drift volume

Semiconductor device including first gate electrode and second gate electrode

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

Electric assembly including a bipolar switching device and a wide bandgap transistor

Semiconductor device with separation regions

Electric assembly including a semiconductor switching device and a clamping diode

Bipolar transistor device with an emitter having two types of emitter regions

Electric assembly including a reverse conducting switching device and a rectifying device

Method of operating an IGBT having switchable and non-switchable diode cells

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Semiconductor device and insulated gate bipolar transistor with barrier structure

Semiconductor device with control structure including buried portions and method of manufacturing

Semiconductor device with recombination region

Semiconductor diode

Diode structure of a power semiconductor device

Semiconductor device having overload current carrying capability

Insulated gate bipolar transistor

Power semiconductor device with dV/dt controllability and low gate charge

Controlling reverse conducting IGBT

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Semiconductor device including first gate electrode and second gate electrode

Diode structure of a power semiconductor device

Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region

Semiconductor device having overload current carrying capability

Semiconductor device with separation regions

Power semiconductor device with dV/dt controllability and low gate charge

Power semiconductor device with dV/dt controllability and low gate charge

RC IGBT, method of producing an RC IGBT and method of controlling a half bridge circuit

Diode with structured barrier region

RC IGBT with an IGBT section and a diode section

Power semiconductor device

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Semiconductor device having an insulated gate bipolar transistor arrangement

Transistor device

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Semiconductor device with a switchable and a non-switchable diode region

Desaturable semiconductor device with transistor cells and auxiliary cells

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

Bipolar transistor device with an emitter having two types of emitter regions

Method of manufacturing a reverse blocking semiconductor device

Semiconductor device with semiconductor mesa including a constriction

Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures

INFINEON TECHNOLOGIES AUSTRIA AG

Transistor device

Semiconductor device comprising a clamping structure

BABURSKE ROMAN

Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode