Inventor

JAEGER CHRISTIAN

DE48 patents

⚠️ This page may combine multiple inventors who share the name “JAEGER CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAEGER CHRISTIAN

INFINEON TECHNOLOGIES AG

Method for producing IGBT with dV/dt controllability

Semiconductor device and insulated gate bipolar transistor with barrier regions

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Method for producing IGBT with dV/dt controllability

Bipolar transistor device with an emitter having two types of emitter regions

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Semiconductor device with variable resistive element

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Power semiconductor device with dV/dt controllability and low gate charge

Semiconductor devices with transistor cells and thermoresistive element

Power semiconductor device having a barrier region

Power semiconductor switch having a cross-trench structure

IGBT with dV/dt controllability

Power semiconductor device having a cross-trench arrangement

IGBT having a barrier region

IGBT with dV/dt controllability

Vertical power semiconductor device and manufacturing method

Power semiconductor device with dV/dt controllability and low gate charge

Vertical power semiconductor device including a field stop region having a plurality of impurity peaks

Power semiconductor device with dV/dt controllability and low gate charge

Method of processing a power semiconductor device

Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same

Semiconductor device with transistor cells and enhancement cells with delayed control signals

IGBT with dV/dt controllability

Circuit and method for driving a power semiconductor switch

Bipolar transistor device with an emitter having two types of emitter regions

Method of manufacturing a reverse blocking semiconductor device

Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures

Semiconductor device with auxiliary structure including deep level dopants

Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and method of manufacturing a reverse blocking semiconductor device

Power semiconductor diode including field stop region

Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same

Semiconductor die, semiconductor device and IGBT module

Trench transistor device

Semiconductor device with sensor potential in the active region

Semiconductor switching device including charge storage structure

BAM BUNDESANSTALT MATFORSCHUNG

Powder mixture for resorbable calcium phosphate biocements

Bone replacement material comprising crystalline and X-ray amorphous phases

Bone replacement material with orthophosphate

BROSE FAHRZEUGTEILE

Carrier with pivotable clamping part and assembly method

BARKOWSKI ANDRE

Navigational device

(unassigned)

Plate-like water aerator

SEXTANT AVIONIQUE

Method and apparatus for communicating between a plurality of subcomponents

BOSCH GMBH ROBERT

Headlamp for motor vehicles

DREYER PETER

Gas concentration-measuring device

CERATIZIT AUSTRIA GMBH

Coated tool

BERGER GEORG

Bone replacement material comprising crystalline phases

COMPO EXPERT GMBH

Plant strengthener comprising a tocopherol and a boron compound