Inventor

LAVEN JOHANNES GEORG

DE119 patents

⚠️ This page may combine multiple inventors who share the name “LAVEN JOHANNES GEORG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAVEN JOHANNES GEORG

INFINEON TECHNOLOGIES AG

Method for producing IGBT with dV/dt controllability

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Method of operating a semiconductor device having an IGBT and desaturation channel structure

IGBT with reduced feedback capacitance

Semiconductor device and insulated gate bipolar transistor with barrier regions

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Semiconductor device with IGBT cell and desaturation channel structure

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

Method for producing IGBT with dV/dt controllability

Electric assembly including a bipolar switching device and a wide bandgap transistor

Semiconductor device with separation regions

Electric assembly including a semiconductor switching device and a clamping diode

Electric assembly including a reverse conducting switching device and a rectifying device

Method of operating an IGBT having switchable and non-switchable diode cells

Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors

Semiconductor device with transistor cells and enhancement cells with delayed control signals

Method for forming a semiconductor device and a semiconductor device

Method of forming a semiconductor substrate with buried cavities and dielectric support structures

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

Semiconductor device with variable resistive element

Semiconductor device with a semiconductor body containing hydrogen-related donors

Semiconductor device and insulated gate bipolar transistor with barrier structure

Semiconductor device with control structure including buried portions and method of manufacturing

Semiconductor device with recombination region

Semiconductor diode

Diode structure of a power semiconductor device

Semiconductor device having overload current carrying capability

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device

Power semiconductor device with dV/dt controllability and low gate charge

Controlling reverse conducting IGBT

Temperature sensor

Methods for forming a semiconductor device and a semiconductor device

Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device

Semiconductor devices with transistor cells and thermoresistive element

Methods for forming a semiconductor device using tilted reactive ion beam

Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Power semiconductor device having a barrier region

Diode structure of a power semiconductor device

Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region

Power semiconductor switch having a cross-trench structure

IGBT with dV/dt controllability

Semiconductor device having overload current carrying capability

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device and method for manufacturing a semiconductor device

Transistor device

Method for producing a superjunction device

Method for producing a superjunction device

Method for manufacturing a semiconductor device

INFINEON TECH DRESDEN GMBH & CO KG

Power semiconductor device with p-contact and doped insulation blocks defining contact holes